scholarly journals Structural and electronic properties of CuSbS2 and CuBiS2: potential absorber materials for thin-film solar cells

2012 ◽  
Vol 14 (20) ◽  
pp. 7229 ◽  
Author(s):  
Jesse T. R. Dufton ◽  
Aron Walsh ◽  
Pooja M. Panchmatia ◽  
Laurie M. Peter ◽  
Diego Colombara ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electronic Properties ◽  
Thin Film Solar Cells ◽  
Structural And Electronic Properties

Unveiling the effects of post-deposition treatment with different alkaline elements on the electronic properties of CIGS thin film solar cells

2014 ◽  
Vol 16 (19) ◽  
pp. 8843 ◽  
Author(s):  
Fabian Pianezzi ◽  
Patrick Reinhard ◽  
Adrian Chirilă ◽  
Benjamin Bissig ◽  
Shiro Nishiwaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electronic Properties ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film ◽  
Post Deposition

Influence of Cu and Na incorporation on the thermodynamic stability and electronic properties of β-In2S3

2018 ◽  
Vol 6 (27) ◽  
pp. 7226-7231 ◽  
Author(s):  
Elaheh Ghorbani ◽  
Karsten Albe
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electronic Properties ◽  
Buffer Layer ◽  
Thermodynamic Stability ◽  
Thin Film Solar Cells ◽  
The Stability

We studied the incorporation of a Na and Cu in β-In2S3 buffer layer and addressed the stability of the absorber/buffer interface in CIGS-based thin film solar cells.

Electronic Properties of Cu-In-S Solar Cells on Cu-Tape Substrate

2001 ◽  
Vol 668 ◽  
Author(s):  
Igor Konovalov ◽  
Jürgen Penndorf ◽  
Michael Winkler ◽  
Olaf Tober
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Structure ◽  
Electronic Properties ◽  
High Throughput ◽  
Cell Structure ◽  
Thin Film Solar Cells ◽  
Whole Cell ◽  
Cell Parameters ◽  
Copper Tape

ABSTRACTThin film solar cells obtained by the “CIS on copper tape” technique are investigated. This technique promises a high throughput capability, but the efficiency of the cells is still about 5 % only. The model of the band structure of the absorber has been introduced into the model of the whole cell. Parameters of the model were determined experimentally by use of quantitative EBIC profiling, C-V doping profiling, Hall measurements, and AFM. The structure has been simulated using SCAPS-1D software. Results of the simulation show a good correlation to the measured I-V and DSR data of the cell. The benefits and drawbacks of the cell structure as well as factors limiting its efficiency are discussed.

Crystal Chemistry, Optical–Electronic Properties, and Electronic Structure of Cd1–xIn2+2x/3S4 Compounds (0 ≤ x ≤ 1), Potential Buffer in CIGS-Based Thin-Film Solar Cells

2018 ◽  
Vol 57 (20) ◽  
pp. 12624-12631 ◽  
Author(s):  
Catherine Guillot-Deudon ◽  
Maria Teresa Caldes ◽  
Adrien Stoliaroff ◽  
Léo Choubrac ◽  
Michaël Paris ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Solar Cells ◽  
Electronic Properties ◽  
Crystal Chemistry ◽  
Thin Film Solar Cells

A correlative investigation of grain boundary crystallography and electronic properties in CdTe thin film solar cells

2017 ◽  
Vol 166 ◽  
pp. 108-120 ◽  
Author(s):  
Guillaume Stechmann ◽  
Stefan Zaefferer ◽  
Torsten Schwarz ◽  
Peter Konijnenberg ◽  
Dierk Raabe ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Grain Boundary ◽  
Electronic Properties ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film

Influence of Ni and Cr impurities on the electronic properties of Cu(In,Ga)Se2 thin film solar cells

2014 ◽  
Vol 23 (7) ◽  
pp. 892-900 ◽  
Author(s):  
Fabian Pianezzi ◽  
Shiro Nishiwaki ◽  
Lukas Kranz ◽  
Carolin M. Sutter-Fella ◽  
Patrick Reinhard ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electronic Properties ◽  
Thin Film Solar Cells
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