On the effect of Au2+ion irradiation in an amorphous Fe–Si thin layer synthesized by ion implantation: a high resolution X-ray diffraction study

CrystEngComm ◽  
2013 ◽  
Vol 15 (12) ◽  
pp. 2251-2259 ◽  
Author(s):  
Alan S. de Menezes ◽  
Guilherme A. Calligaris ◽  
Rossano Lang ◽  
Adenilson O. dos Santos ◽  
Lisandro P. Cardoso
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Thin Layer ◽  
Diffraction Study ◽  
Ion Irradiation ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals High-resolution synchrotron x-ray diffraction study of Zr-rich compositions of Pb(ZrxTi1−x)O3 (0.525⩽x⩽0.60): Evidence for the absence of the rhombohedral phase

2007 ◽  
Vol 91 (19) ◽  
pp. 192904 ◽  
Author(s):  
Akhilesh Kumar Singh ◽  
Dhananjai Pandey ◽  
Songhak Yoon ◽  
Sunggi Baik ◽  
Namsoo Shin
Keyword(s):  
High Resolution ◽  
Diffraction Study ◽  
Rhombohedral Phase ◽  
X Ray Diffraction ◽  
X Ray

Ion Implantation Defect Characterization by High-Resolution X-Ray Diffraction

1992 ◽  
Vol 262 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Lattice Strain ◽  
Crystalline Silicon ◽  
High Energy ◽  
Silicon Sample ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Defect

ABSTRACTHigh-energy ion-implantation is one of the roost critical processing steps regarding the formation of defects in mono-crystalline silicon. High- as well as low-doses implanted at various energies can result in relatively high residual defect concentrations after post-implantation annealing.Before annealing, the crystal lattice strain is mainly caused by the point defects. After annealing, the accommodation of substitutional impurities is the main origin of the residual lattice strain. High-Resolution X-ray Diffraction (HRXD) has been frequently used for the characterization of these structures. Dislocation loops formed during the high temperature step, however, cause enhanced diffuse X-ray scattering, which can dominate the measured X-ray intensity in conventional HRXD.Triple axis diffractometry is used in this study to analyze the size, type and location of defects in a boron implanted and rapid thermally annealed silicon sample.

High-resolution x-ray diffraction study ofLa1.88−ySr0.12NdyCuO4

1998 ◽  
Vol 58 (14) ◽  
pp. 9549-9555 ◽  
Author(s):  
A. R. Moodenbaugh ◽  
Lijun Wu ◽  
Yimei Zhu ◽  
L. H. Lewis ◽  
D. E. Cox
Keyword(s):  
High Resolution ◽  
Diffraction Study ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals High-resolution X-ray diffraction study of AlxGa1−xSb alloys grown by liquid-phase epitaxy

2008 ◽  
Vol 64 (a1) ◽  
pp. C592-C592
Author(s):  
M. Rojas ◽  
E. Momox ◽  
R. Delgado ◽  
V. Gayou ◽  
A. Orduna ◽  
...  
Keyword(s):  
Liquid Phase ◽  
High Resolution ◽  
Diffraction Study ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

High-resolution X-ray diffraction study of CZ-grown GaAsP crystals

2007 ◽  
Vol 204 (8) ◽  
pp. 2578-2584
Author(s):  
G. Kowalski ◽  
J. Gronkowski ◽  
A. Czyżak ◽  
T. Słupiński ◽  
J. Borowski
Keyword(s):  
High Resolution ◽  
Diffraction Study ◽  
X Ray Diffraction ◽  
X Ray
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