Band gap measurement of SrFeO3−δ by ultraviolet photoelectron spectroscopy and photovoltage method

CrystEngComm ◽  
2012 ◽  
Vol 14 (21) ◽  
pp. 7487 ◽  
Author(s):  
M. Ghaffari ◽  
H. Huang ◽  
O. K. Tan ◽  
M. Shannon
Keyword(s):  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Gap Measurement

Surface potential of liquid microjet investigated using extreme ultraviolet photoelectron spectroscopy

2020 ◽  
Vol 152 (14) ◽  
pp. 144503
Author(s):  
Junichi Nishitani ◽  
Shutaro Karashima ◽  
Christopher W. West ◽  
Toshinori Suzuki
Keyword(s):  
Surface Potential ◽  
Photoelectron Spectroscopy ◽  
Extreme Ultraviolet ◽  
Ultraviolet Photoelectron Spectroscopy

Vacuum ultraviolet photoelectron spectroscopy of transient species

1981 ◽  
Vol 44 (5) ◽  
pp. 1059-1066 ◽  
Author(s):  
J.M. Dyke ◽  
N.B.H. Jonathan ◽  
A. Morris ◽  
M.J. Winter
Keyword(s):  
Photoelectron Spectroscopy ◽  
Vacuum Ultraviolet ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Transient Species

Ultraviolet Photoelectron Spectroscopy of Polymers

2006 ◽  
Vol 455 (1) ◽  
pp. 193-203 ◽  
Author(s):  
M. P. de Jong ◽  
R. Friedlein ◽  
W. Osikowicz ◽  
W. R. Salaneck ◽  
M. Fahlman
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy

CdTe Thin Film Solar Cells: The CdS/SnO2 Front Contact

2001 ◽  
Vol 668 ◽  
Author(s):  
J. Fritsche ◽  
S. Gunst ◽  
A. Thiβen ◽  
R. Gegenwart ◽  
A. Klein ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Tin Dioxide ◽  
Surface Preparation ◽  
Thin Film Solar Cells ◽  
Subsequent Formation ◽  
Coated Glass ◽  
Preparation Conditions

ABSTRACTTin dioxide (SnO2) coated glass is the commonly used substrate for thin film solar cells based on CdTe absorbers. We have investigated the properties of the CdS/SnO2 interface by X-ray and ultraviolet photoelectron spectroscopy. SnO2 coated glass substrates as used for solar cell preparation were cleaned by different procedures such as derinsing, sputtering, heating and annealing in oxygen atmosphere. Different surface properties with a strongly dependent number of defects in the SnO2 band gap are identified. CdS films were deposited stepwise by thermal evaporation to determine the electronic interface properties for different surface preparation conditions. Comparative barrier heights at the CdSSnO2 contact are found for most surface pretreatments. The Fermi level position in these cases is situated in the SnO2 band gap. A different interface behaviour is determined for sputter cleaned SnO2 surfaces, which is attributed to the formation of oxygen vacancies during sputtering and subsequent formation of an interfacial SnOxSy compound.

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