Plasma effects in semiconducting nanowire growth

Nanoscale ◽  
2012 ◽  
Vol 4 (5) ◽  
pp. 1497-1508 ◽  
Author(s):  
Kostya (Ken) Ostrikov ◽  
Dong Han Seo ◽  
Hamid Mehdipour ◽  
Qijin Cheng ◽  
Shailesh Kumar
Keyword(s):  
Nanowire Growth ◽  
Plasma Effects

PLASMA EFFECTS IN ION BEAM TARGET INTERACTION

1983 ◽  
Vol 44 (C8) ◽  
pp. C8-93-C8-106 ◽  
Author(s):  
E. Nardi ◽  
Z. Zinamon
Keyword(s):  
Ion Beam ◽  
Target Interaction ◽  
Plasma Effects

Ferromagnetic resonance and plasma effects in metals

1967 ◽  
Vol 92 (8) ◽  
pp. 583-619 ◽  
Author(s):  
A.Ya. Blank ◽  
M.I. Kaganov
Keyword(s):  
Ferromagnetic Resonance ◽  
Plasma Effects

scholarly journals Controlled Living Nanowire Growth: Precise Control over the Morphology and Optical Properties of AgAuAg Bimetallic Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (8) ◽  
pp. 5427-5437 ◽  
Author(s):  
Martin Mayer ◽  
Leonardo Scarabelli ◽  
Katia March ◽  
Thomas Altantzis ◽  
Moritz Tebbe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Nanowire Growth ◽  
Precise Control

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals CdTe-HgTe core-shell nanowire growth controlled by RHEED

2017 ◽  
Vol 1 (2) ◽  
Author(s):  
M. Kessel ◽  
J. Hajer ◽  
G. Karczewski ◽  
C. Schumacher ◽  
C. Brüne ◽  
...  
Keyword(s):  
Nanowire Growth ◽  
Core Shell

Plasma and electrode interactions in short gap discharges in air I. Plasma effects†

1971 ◽  
Vol 30 (4) ◽  
pp. 301-313 ◽  
Author(s):  
EOIN W. GRAY ◽  
JACQUES A. AUGIS ◽  
FRANK J. GIBSON
Keyword(s):  
Plasma Effects

High repetition rate laser ablation for vapor–liquid–solid nanowire growth

2014 ◽  
Vol 14 (4) ◽  
pp. 614-620 ◽  
Author(s):  
A. Marcu ◽  
F. Stokker ◽  
R.R. Zamani ◽  
C.P. Lungu ◽  
C. Grigoriu
Keyword(s):  
Laser Ablation ◽  
Repetition Rate ◽  
High Repetition Rate ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
High Repetition ◽  
Vapor Liquid

Lateral, Ge, nanowire growth on SiO2

2011 ◽  
Vol 22 (6) ◽  
pp. 065201 ◽  
Author(s):  
Nathaniel J Quitoriano ◽  
Theodore I Kamins
Keyword(s):  
Nanowire Growth
Sign in / Sign up

Export Citation Format

Share Document