High pressure studies of the transport properties of ionic liquids

2012 ◽  
Vol 154 ◽  
pp. 425-438 ◽  
Author(s):  
Kenneth R. Harris ◽  
Mitsuhiro Kanakubo
2010 ◽  
Vol 113-116 ◽  
pp. 1744-1748 ◽  
Author(s):  
Li Ying Guo ◽  
Mu Zhang

The present work deals with the synthesis of various imidazole ionic liquids [BMIM]Cl, [AMIM]Cl, [AEIM]Cl, [HeEIM]Cl and [HeVIM]Cl, the chemical structures of ionic liquids by FTIR and 1HNMR, the pretreatment of wood powder as extracted with a mixture of benzene/ethanol or activated with 25% (mass fraction) NaOH under normal temperature and pressure, microwave and high pressure, studies the solubility of ionic liquids on the wood powder by microwave (90°C, 400w), and analyses the microstructure of the wood before and after dissolution as measured by SEM. The result shows that all the ionic liquids can dissolve the wood fiber directly, ionic liquids containing hydroxyl group exhibit better solubility. Wood powder pretreated with 25% NaOH under high pressure has the lowest crystallinity (2.4%) and the highest dissolution rate. The solubility of [HeVIM]Cl is the best, which approach to 21.6%.


2017 ◽  
Vol 19 (21) ◽  
pp. 14141-14147 ◽  
Author(s):  
Z. Wojnarowska ◽  
E. Thoms ◽  
B. Blanchard ◽  
S. N. Tripathy ◽  
P. Goodrich ◽  
...  

In this paper the key role of the apparent activation volume parameter in the charge transport properties of protic and aprotic ionic liquids is demonstrated.


1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


2014 ◽  
Vol 50 (9) ◽  
pp. 861-867
Author(s):  
A. Yu. Mollaev ◽  
L. A. Saipulaeva ◽  
R. K. Arslanov ◽  
A. N. Babushkin

2021 ◽  
pp. 113036
Author(s):  
Emanuel A. Crespo ◽  
Liliana P. Silva ◽  
Cristina I.P. Correia ◽  
Mónia A.R. Martins ◽  
Ramesh L. Gardas ◽  
...  

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