Spin seebeck coefficient of a molecular spin pump

2011 ◽  
Vol 13 (32) ◽  
pp. 14350 ◽  
Author(s):  
Jonas Fransson ◽  
Michael Galperin
Keyword(s):  
Seebeck Coefficient ◽  
Molecular Spin ◽  
Spin Pump

Engineering Electronic Structure to Protect Phase Memory in Molecular Qubits by Minimising Orbital Angular Momentum

2018 ◽  
Author(s):  
Ana Maria Ariciu ◽  
David H. Woen ◽  
Daniel N. Huh ◽  
Lydia Nodaraki ◽  
Andreas Kostopoulos ◽  
...  
Keyword(s):  
Electron Spin ◽  
Quantum Coherence ◽  
Quantum Information Processing ◽  
Pulse Sequences ◽  
Grover Algorithm ◽  
Ligand Shell ◽  
Information Strategies ◽  
Spin Qubit ◽  
Molecular Spin ◽  
The Impact

Using electron spins within molecules for quantum information processing (QIP) was first proposed by Leuenberger and Loss (1), who showed how the Grover algorithm could be mapped onto a Mn12 cage (2). Since then several groups have examined two-level (S = ½) molecular spin systems as possible qubits (3-12). There has also been a report of the implementation of the Grover algorithm in a four-level molecular qudit (13). A major challenge is to protect the spin qubit from noise that causes loss of phase information; strategies to minimize the impact of noise on qubits can be categorized as corrective, reductive, or protective. Corrective approaches allow noise and correct for its impact on the qubit using advanced microwave pulse sequences (3). Reductive approaches reduce the noise by minimising the number of nearby nuclear spins (7-11), and increasing the rigidity of molecules to minimise the effect of vibrations (which can cause a fluctuating magnetic field via spin-orbit coupling) (9,11); this is essentially engineering the ligand shell surrounding the electron spin. A protective approach would seek to make the qubit less sensitive to noise: an example of the protective approach is the use of clock transitions to render spin states immune to magnetic fields at first order (12). Here we present a further protective method that would complement reductive and corrective approaches to enhancing quantum coherence in molecular qubits. The target is a molecular spin qubit with an effective 2S ground state: we achieve this with a family of divalent rare-earth molecules that have negligible magnetic anisotropy such that the isotropic nature of the electron spin renders the qubit markedly less sensitive to magnetic noise, allowing coherent spin manipulations even at room temperature. If combined with the other strategies, we believe this could lead to molecular qubits with substantial advantages over competing qubit proposals.<br>

High Positive Seebeck Coefficient of Aqueous I–/I3– Thermocells Based on Host–Guest Interactions and LCST Behavior of PEGylated α-Cyclodextrin

2021 ◽  
Author(s):  
Yimin Liang ◽  
Joseph Ka-Ho Hui ◽  
Masa-aki Morikawa ◽  
Hirotaka Inoue ◽  
Teppei Yamada ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Lcst Behavior

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

Thermoelectric Studies of Silver Nitrate in Sodium Nitrate – Potassium Nitrate Eutectic Melt

1971 ◽  
Vol 49 (12) ◽  
pp. 2044-2047
Author(s):  
L. G. Boxall ◽  
K. E. Johnson
Keyword(s):  
Seebeck Coefficient ◽  
Silver Nitrate ◽  
Mole Fraction ◽  
Sodium Nitrate ◽  
Nitrate Concentration ◽  
Potassium Nitrate ◽  
Silver Nitrate Concentration ◽  
Eutectic Melt

The Seebeck coefficient, εT, of the thermocell Ag(T)/AgNO3 in NaNO3 − KNO3/Ag (T + ΔT) was measured as a function of silver nitrate concentration and temperature. Extrapolation of the results to unit mole fraction, N, of AgNO3 gave the value εT0 = − 277.5 − 0.136T °C (µV deg−1).For several mixed melts of AgNO3 and an alkali nitrate the function [Formula: see text] was calculated and shown to be linear in N. P was extrapolated to finite values for the pure alkali nitrates.

Investigation of Thermoelectric Materials: Substitution effect of Bi on the Ag1-xPb18MTe20 (M = Sb, Bi) (x = 0, 0.14, 0.3)

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substitution Effect ◽  
Dimensionless Figure Of Merit ◽  
The Matrix ◽  
Mass Fluctuation

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).

scholarly journals Encoding Information on the Excited State of a Molecular Spin Chain

2021 ◽  
pp. 2009467
Author(s):  
Kostantine Katcko ◽  
Etienne Urbain ◽  
Franck Ngassam ◽  
Lalit Kandpal ◽  
Bhavishya Chowrira ◽  
...  
Keyword(s):  
Excited State ◽  
Spin Chain ◽  
Molecular Spin
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