Persistence time of charge carriers in defect states of molecular semiconductors

2011 ◽  
Vol 13 (21) ◽  
pp. 10241 ◽  
Author(s):  
David P. McMahon ◽  
Alessandro Troisi
Keyword(s):  
Charge Carriers ◽  
Defect States ◽  
Persistence Time ◽  
Molecular Semiconductors

Defect states and their energetic position and distribution in organic molecular semiconductors

2013 ◽  
Vol 102 (14) ◽  
pp. 143301 ◽  
Author(s):  
Akanksha Sharma ◽  
Sarita Yadav ◽  
Pramod Kumar ◽  
Sumita Ray Chaudhuri ◽  
Subhasis Ghosh
Keyword(s):  
Defect States ◽  
Molecular Semiconductors ◽  
Energetic Position

Kinetics of thermalization of electric charge carriers in organic molecular semiconductors in strong electric fields

2008 ◽  
Vol 50 (7) ◽  
pp. 1374-1380 ◽  
Author(s):  
N. P. Kulish ◽  
Yu. M. Barabash ◽  
M. A. Zabolotny ◽  
D. A. Grin’ko ◽  
O. P. Dmitrenko ◽  
...  
Keyword(s):  
Electric Fields ◽  
Electric Charge ◽  
Charge Carriers ◽  
Strong Electric Fields ◽  
Molecular Semiconductors ◽  
Kinetics Of

Interaction of Charge Carriers with Lattice Vibrations in Organic Molecular Semiconductors: Naphthalene as a Case Study

2009 ◽  
Vol 113 (11) ◽  
pp. 4679-4686 ◽  
Author(s):  
Veaceslav Coropceanu ◽  
Roel S. Sánchez-Carrera ◽  
Pavel Paramonov ◽  
Graeme M. Day ◽  
Jean-Luc Brédas
Keyword(s):  
Charge Carriers ◽  
Lattice Vibrations ◽  
Molecular Semiconductors

scholarly journals Photon assisted-inversion of majority charge carriers in molecular semiconductors-based organic heterojunctions

2021 ◽  
Author(s):  
Gracia Loma-kikobo ◽  
Abhishek Kumar ◽  
Vaibhav Vibhu ◽  
Seydou Ouedraogo ◽  
Alix Deshotel ◽  
...  
Keyword(s):  
Building Block ◽  
Low Cost ◽  
Charge Carriers ◽  
Next Generation ◽  
Molecular Materials ◽  
Highly Efficient ◽  
Molecular Semiconductors ◽  
Organic Heterojunctions

Ambipolar molecular materials hold great promises as a building block of next generation highly efficient, less complex and low cost electronics devices. In this endeavor, the present work reports the...

Photocarrier Generation in Fullerene Films

1994 ◽  
Vol 349 ◽  
Author(s):  
R. KÖnenkamp ◽  
J. Erxmeyer ◽  
A. Weidinger
Keyword(s):  
Sample Preparation ◽  
Charge Carriers ◽  
Electronic Transitions ◽  
Molecular Vibrations ◽  
Mobile Charge ◽  
Defect States ◽  
Molecular Electronic ◽  
Vibrational Bands ◽  
C60 Films

ABSTRACTWe present results from a detailed study of photoconductivity in thin C60 films. It is shown that the generation of mobile charge carriers involves molecular electronic transitions coupled to molecular vibrations. The vibrational bands broaden with temperature and shift at the fcc-to-scphase transition. For excitations with energy below ∼1.8 eV photoconduction appears to involve a tail of defect states whose distribution is somewhat dependent on sample preparation.

scholarly journals Study of Small Polaronic, Variable Hopping Conduction and Its Exploration By Impedance Analysis in I- Substituted CaCu3Ti4O12 at O- Ion Site By Fine-Tuning The Electrical Properties, Grains and Grain Boundaries

2021 ◽  
Author(s):  
Bhoomika Yadav ◽  
Rajesh Kumar ◽  
Kamal K. Kar ◽  
Manas K. Ghorai
Keyword(s):  
Nearest Neighbor ◽  
Low Frequency ◽  
Impedance Analysis ◽  
Relaxation Mechanism ◽  
Charge Carriers ◽  
Fine Tuning ◽  
Relaxation Processes ◽  
Defect States ◽  
Temperature Zone ◽  
High Loss

Abstract In this study, dielectric and impedance related investigation are carried out in solid-state synthesized iodine doped CaCu3Ti4O12-xIx (x= 0, 0.005, 0.05 and 0.2) at anion site in the varying temperature (300-500 K) and frequency (20 Hz - 1 MHz). The detailed analysis of dielectric and scaled plot (Z″, M″) confirm the Maxwell-Wagner relaxations unlike Debye type. Broad relaxation peaks in spectroscopic plots and nearly straight lines in admittance (Y″ vs. Yʹ) and ε″ vs. εʹ reveals the occurrence of various relaxation processes with a narrow distribution of time constants. Mismatch in peak frequencies of Z″/ Z″max and M″/ M″max suggest that relaxation mechanism is dominated by short-range (localized) movement of charge carriers. The twinning values of Ea,τ,M″ (≈ 0.067 eV) and Ea,τ,Z” (≈0.081 eV) indicate the involvement of same type of charge carriers in conduction and relaxation processes. Correlating Jonscher’s power law and overlapping peaks in the combined plot of M″, Z″ vs. log f indicates high loss, due to DC conduction through localized hopping of small polarons via some defect states through Mott’s VRH mechanism, among the highly concentrated density of states, N (Ef), confined in the very low-temperature zone and nearest-neighbor hopping (NNH) of polarons due to Arrhenius in high-temperature zone both reserved in low-frequency region (≤1 kHz) only.

Process of thermalization of charge carriers in amorphous molecular semiconductors

2006 ◽  
Author(s):  
Y. Barabash ◽  
V. Kharkyanen ◽  
M. Zabolotny ◽  
T. Zabolotnaya
Keyword(s):  
Charge Carriers ◽  
Molecular Semiconductors

scholarly journals Ab initio nonadiabatic molecular dynamics of charge carriers in metal halide perovskites

Nanoscale ◽  
2021 ◽  
Author(s):  
Wei Li ◽  
Yalan She ◽  
Andrey S. Vasenko ◽  
Oleg V. Prezhdo
Keyword(s):  
Molecular Dynamics ◽  
Time Domain ◽  
Quantum Dynamics ◽  
Density Functional ◽  
Metal Halide ◽  
Charge Carriers ◽  
Functional Theory ◽  
Nonadiabatic Molecular Dynamics ◽  
Halide Perovskites ◽  
Molecular Semiconductors

Atomistic details govern quantum dynamics of charge carriers in metal halide perovskites, which exhibit properties of solid state and molecular semiconductors, as revealed by time-domain density functional theory and nonadiabatic molecular dynamics.

Detector strategies for environmental scanning electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1296-1297
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Vacuum ◽  
Environmental Scanning Electron Microscopy ◽  
Charge Carriers ◽  
Environmental Scanning ◽  
Surface Information ◽  
X Ray ◽  
Detector Electrode ◽  
Electrons And Ions ◽  
Low Energy Electrons ◽  
Environmental Sem

Environmental SEM operate at specimen chamber pressures of ∼20 torr (2.7 kPa) allowing stabilization of liquid water at room temperature, working on rugged insulators, and generation of an environmental secondary electron (ESE) signal. All signals available in conventional high vacuum instruments are also utilized in the environmental SEM, including BSE, SE, absorbed current, CL, and X-ray. In addition, the ESEM allows utilization of the flux of charge carriers as information, providing exciting new signal modes not available to BSE imaging or to conventional high vacuum SEM.In the ESEM, at low vacuum, SE electrons are collected with a “gaseous detector”. This detector collects low energy electrons (and ions) with biased wires or plates similar to those used in early high vacuum SEM for SE detection. The detector electrode can be integrated into the first PLA or positioned at any other place resulting in a versatile system that provides a variety of surface information.

Direct imaging of charge transfer

1996 ◽  
Vol 54 ◽  
pp. 680-681
Author(s):  
Yimei Zhu ◽  
J. Tafto
Keyword(s):  
Charge Transfer ◽  
Electron Diffraction ◽  
Scattering Amplitude ◽  
High Temperature Superconductors ◽  
Charge Carriers ◽  
Image Charge ◽  
Net Charge ◽  
Long Time ◽  
Electron Holes ◽  
First Time

The electron holes confined to the CuO2-plane are the charge carriers in high-temperature superconductors, and thus, the distribution of charge plays a key role in determining their superconducting properties. While it has been known for a long time that in principle, electron diffraction at low angles is very sensitive to charge transfer, we, for the first time, show that under a proper TEM imaging condition, it is possible to directly image charge in crystals with a large unit cell. We apply this new way of studying charge distribution to the technologically important Bi2Sr2Ca1Cu2O8+δ superconductors.Charged particles interact with the electrostatic potential, and thus, for small scattering angles, the incident particle sees a nuclei that is screened by the electron cloud. Hence, the scattering amplitude mainly is determined by the net charge of the ion. Comparing with the high Z neutral Bi atom, we note that the scattering amplitude of the hole or an electron is larger at small scattering angles. This is in stark contrast to the displacements which contribute negligibly to the electron diffraction pattern at small angles because of the short g-vectors.

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