A novel catalyst-free synthesis of vertically aligned silicon nanowire–carbon nanotube heterojunction arrays for high performance electron field emitters

2011 ◽  
Vol 47 (27) ◽  
pp. 7785 ◽  
Author(s):  
Vinayak S. Kale ◽  
Bhaskar R. Sathe ◽  
Ajay Kushwaha ◽  
Mohammed Aslam ◽  
Manjusha V. Shelke
Keyword(s):  
Carbon Nanotube ◽  
High Performance ◽  
Silicon Nanowire ◽  
Catalyst Free ◽  
Field Emitters ◽  
Electron Field ◽  
Vertically Aligned ◽  
Novel Catalyst

Carbon nanotube films as electron field emitters

Carbon ◽  
2002 ◽  
Vol 40 (10) ◽  
pp. 1715-1728 ◽  
Author(s):  
Jean-Marc Bonard ◽  
Mirko Croci ◽  
Christian Klinke ◽  
Ralph Kurt ◽  
Olivier Noury ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emitters ◽  
Electron Field ◽  
Nanotube Films

scholarly journals Carbon nanotube electron field emitters for x-ray imaging of human breast cancer

2014 ◽  
Vol 25 (24) ◽  
pp. 245704 ◽  
Author(s):  
Emily Gidcumb ◽  
Bo Gao ◽  
Jing Shan ◽  
Christy Inscoe ◽  
Jianping Lu ◽  
...  
Keyword(s):  
Breast Cancer ◽  
Carbon Nanotube ◽  
Human Breast Cancer ◽  
Human Breast ◽  
X Ray ◽  
Field Emitters ◽  
X Ray Imaging ◽  
Electron Field

Dye-Improved Optical Absorption of Vertically Aligned Silicon Nanowire Arrays Synthesized by Electroless Etching of Silicon Wafer

2014 ◽  
Vol 895 ◽  
pp. 200-203 ◽  
Author(s):  
Hui Chiang Teoh ◽  
Sabar Derita Hutagalung
Keyword(s):  
Silicon Nanowires ◽  
High Performance ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Electroless Etching ◽  
Dye Sensitized ◽  
Silicon Nanowire Arrays ◽  
Wide Range ◽  
Vertically Aligned ◽  
Si Wafer

Silicon nanowires (SiNWs) are important candidate for high performance electronic and optoelectronic devices due to their unique structures, electrical and optical properties. SiNWs were fabricated by silver-assisted electroless etching of Si wafer. Vertically aligned SiNW arrays with length about 8.75 μm and diameter of less than 90 nm have been fabricated. The reflectance of SiNWs without dye (12%) is greatly lower compared to bare Si wafer (25%). Therefore, SiNWs on Si substrate can be used as a good anti-reflection layer for a wide range of incident light. The reflectance of dye-sensitized SiNWs with red, green and blue dyes is 7%, 5.5%, and 5% respectively. The results confirmed that the reflectance of SiNWs with dye is much lower compared to SiNWs without dye and bare Si wafer. It was proven that dye on SiNWs can be used to reduce the reflectance (improved absorption) about 40% compared to SiNWs without dye.

A Comparative Study of Compressible and Conductive Vertically Aligned Carbon Nanotube Forest in Different Polymer Matrixes for High-Performance Piezoresistive Force Sensors

2020 ◽  
Vol 12 (14) ◽  
pp. 16946-16958
Author(s):  
Sharon J. Paul ◽  
Indu Sharma ◽  
Indu Elizabeth ◽  
Bhaskar Gahtori ◽  
Manikandan R. M ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Comparative Study ◽  
High Performance ◽  
Force Sensors ◽  
Vertically Aligned

High performance and antifouling vertically aligned carbon nanotube membrane for water purification

2014 ◽  
Vol 460 ◽  
pp. 171-177 ◽  
Author(s):  
Youngbin Baek ◽  
Cholin Kim ◽  
Dong Kyun Seo ◽  
Taewoo Kim ◽  
Jeong Seok Lee ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Water Purification ◽  
High Performance ◽  
Vertically Aligned

Vertical arrays of SiNWs–ZnO nanostructures as high performance electron field emitters

2012 ◽  
Vol 22 (43) ◽  
pp. 22922 ◽  
Author(s):  
Rami Reddy Devarapalli ◽  
Deodatta R. Shinde ◽  
Fatiha Barka-Bouaifel ◽  
Sandeep G. Yenchalwar ◽  
Rabah Boukherroub ◽  
...  
Keyword(s):  
High Performance ◽  
Zno Nanostructures ◽  
Vertical Arrays ◽  
Field Emitters ◽  
Electron Field
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