Quantitative characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical parameters

2012 ◽  
Vol 4 (1) ◽  
pp. 106-117 ◽  
Author(s):  
D. J. Crain ◽  
J. E. Garland ◽  
S. E. Rock ◽  
D. Roy
Keyword(s):  
Solar Cells ◽  
Analytical Approach ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Quantitative Characterization ◽  
Voltage Dependent ◽  
Combined Measurements

Characterization of Electrical Parameters of Cracked Crystalline Silicon Solar Cells in Photovoltaic Modules

2021 ◽  
Author(s):  
Rodrigo Del Prado Santamaria ◽  
Gisele A. Dos Reis Benatto ◽  
Adrian A. Santamaria Lancia ◽  
Marin Garaj ◽  
Sune Thorsteinsson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Photovoltaic Modules

Light Beam Induced Current Mapping of mc-Si Solar Cells: Influence of Grain Boundaries and Intragrain Defects

2010 ◽  
Vol 1268 ◽  
Author(s):  
Juan Jimenez ◽  
Benito Moralejo ◽  
Vanesa Hortelano ◽  
Miguel Ángel González ◽  
Oscar Martínez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundaries ◽  
Structural Heterogeneity ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Induced Current ◽  
Electrical Parameters ◽  
Si Solar Cells ◽  
Reflected Light

AbstractThe photovoltaic market is currently dominated by multicrystalline silicon. However, this material is characterized by intrinsic structural heterogeneity due to point defects, dislocations and grain boundaries. In order to improve the cell performance the control of the electrical properties of the grain boundaries and dislocations is required. The laser beam induced current technique allows the estimation of the variations of the charge capture rates due to the different trapping centers, and is a powerful tool for the characterization of multicrystalline silicon solar cells. Nevertheless, one has to control the reflected light in order to obtain a reliable estimation of the electrical parameters.

Characterization of PIII textured industrial multicrystalline silicon solar cells

Solar Energy ◽  
2012 ◽  
Vol 86 (10) ◽  
pp. 3004-3008 ◽  
Author(s):  
Jie Liu ◽  
Bangwu Liu ◽  
Zenan Shen ◽  
Jinhu Liu ◽  
Sihua Zhong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells

Characterization of silicon solar cells and substrates with the PVScan 5000

1996 ◽  
Author(s):  
Kevin F. Carr ◽  
N. Carlson ◽  
P. Weitzman ◽  
B. L. Sopori ◽  
C. Marshall ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells

The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

2019 ◽  
Vol 36 (3) ◽  
pp. 90-94
Author(s):  
Barbara Swatowska ◽  
Piotr Panek ◽  
Dagmara Michoń ◽  
Aleksandra Drygała
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Content Type ◽  
Diffusion Parameters

Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

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