The interplay of crystallization kinetics and morphology during the formation of SnO2 nanorods: snapshots of the crystallization from fast microwave reactions

CrystEngComm ◽  
2011 ◽  
Vol 13 (7) ◽  
pp. 2487 ◽  
Author(s):  
Alexander Birkel ◽  
Frank Reuter ◽  
Dominik Koll ◽  
Stefan Frank ◽  
Robert Branscheid ◽  
...  
2020 ◽  
Author(s):  
Liyuan Wang ◽  
Jiaxi Liu ◽  
Nan Lu ◽  
Zengchao Yang ◽  
Gang He ◽  
...  

1974 ◽  
Vol 39 (9) ◽  
pp. 2520-2531 ◽  
Author(s):  
O. Söhnel ◽  
M. Krpata

2019 ◽  
Vol 3 (1) ◽  
pp. 658-665 ◽  
Author(s):  
Linfeng Ye ◽  
Hongyue Wang ◽  
Yang Wei ◽  
Pengfei Guo ◽  
Xiaokun Yang ◽  
...  

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.


Author(s):  
Pratim Kumar Patra ◽  
Aanchal Jaisingh ◽  
Vishal Goel ◽  
Gurpreet Singh Kapur ◽  
Leena Nebhani

2021 ◽  
Vol 154 (14) ◽  
pp. 144703
Author(s):  
R. Scott Smith ◽  
M. Tylinski ◽  
Greg A. Kimmel ◽  
Bruce D. Kay

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