Chalcogen chemistry of group(iv) closo-dodecaborates, synthesis, theory and coordination chemistry

2010 ◽  
Vol 39 (32) ◽  
pp. 7504 ◽  
Author(s):  
Jörg-Alexander Dimmer ◽  
Martin Hornung ◽  
Florian Weigend ◽  
Lars Wesemann
2014 ◽  
Vol 53 (8) ◽  
pp. 4144-4153 ◽  
Author(s):  
Sonja Batke ◽  
Malte Sietzen ◽  
Hubert Wadepohl ◽  
Joachim Ballmann

2009 ◽  
Vol 2009 (6) ◽  
pp. 735-743 ◽  
Author(s):  
Karen J. Blackmore ◽  
Neetu Lal ◽  
Joseph W. Ziller ◽  
Alan F. Heyduk

Author(s):  
J W Steeds

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.


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