Construction of EuF3 hollow sub-microspheres and single-crystal hexagonal microdiscs via Ostwald ripening and oriented attachment

CrystEngComm ◽  
2009 ◽  
Vol 11 (8) ◽  
pp. 1591 ◽  
Author(s):  
Zhiming Chen ◽  
Zhirong Geng ◽  
Menglu Shi ◽  
Zhihui Liu ◽  
Zhilin Wang
Keyword(s):  
Single Crystal ◽  
Ostwald Ripening ◽  
Oriented Attachment

Controllable synthesis, characterization and photoluminescence properties of flower-like BaMoO4 hierarchical architectures

CrystEngComm ◽  
2020 ◽  
Vol 22 (18) ◽  
pp. 3115-3121 ◽  
Author(s):  
YuQin Mao ◽  
JianGang Wei ◽  
Yongjin Zou ◽  
LuPing Zhu
Keyword(s):  
Ostwald Ripening ◽  
Solvothermal Method ◽  
Oriented Attachment ◽  
Photoluminescence Properties ◽  
Controllable Synthesis ◽  
Hierarchical Architectures ◽  
Facile Solvothermal Method ◽  
Ostwald Ripening Mechanism

Flower-like BaMoO4 hierarchical architectures were prepared by a facile solvothermal method. A nucleation–oriented attachment–assembly–Ostwald ripening mechanism is presented for the formation of the BaMoO4 samples.

scholarly journals Single Crystal Manganese Oxide Multipods by Oriented Attachment.

ChemInform ◽  
2006 ◽  
Vol 37 (3) ◽  
Author(s):  
David Zitoun ◽  
Nicola Pinna ◽  
Nathalie Frolet ◽  
Claude Belin
Keyword(s):  
Single Crystal ◽  
Manganese Oxide ◽  
Oriented Attachment

Synthesis of narrow band gap SnTe nanocrystals: nanoparticles and single crystal nanowires via oriented attachment

CrystEngComm ◽  
2010 ◽  
Vol 12 (12) ◽  
pp. 4275 ◽  
Author(s):  
Jiajia Ning ◽  
Kangkang Men ◽  
Guanjun Xiao ◽  
Bo Zou ◽  
Li Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Narrow Band ◽  
Oriented Attachment

Hyperbranched crystalline nanostructure produced from ionic π-conjugated molecules

2015 ◽  
Vol 51 (13) ◽  
pp. 2663-2666 ◽  
Author(s):  
Jeremy R. Eskelsen ◽  
Kara J. Phillips ◽  
K. W. Hipps ◽  
Ursula Mazur
Keyword(s):  
Organic Semiconductors ◽  
Self Assembly ◽  
Ostwald Ripening ◽  
Oriented Attachment ◽  
Growth Mechanisms ◽  
Conjugated Molecules

We report the first synthesis of a hyperbranched sheaf-like nanostructure by ionic self-assembly of organic semiconductors that forms via combined oriented attachment and Ostwald ripening growth mechanisms.

Single Crystal Manganese Oxide Multipods by Oriented Attachment

2005 ◽  
Vol 127 (43) ◽  
pp. 15034-15035 ◽  
Author(s):  
David Zitoun ◽  
Nicola Pinna ◽  
Nathalie Frolet ◽  
Claude Belin
Keyword(s):  
Single Crystal ◽  
Manganese Oxide ◽  
Oriented Attachment

Oriented-attachment growth of diamond single crystal from detonation nanodiamonds

2017 ◽  
Vol 75 ◽  
pp. 85-90 ◽  
Author(s):  
A.T. Dideikin ◽  
E.D. Eidelman ◽  
S.V. Kidalov ◽  
D.A. Kirilenko ◽  
A.P. Meilakhs ◽  
...  
Keyword(s):  
Single Crystal ◽  
Oriented Attachment ◽  
Detonation Nanodiamonds ◽  
Diamond Single Crystal

Formation of quasi-mesocrystal ZnMn2O4 twin microspheres via an oriented attachment for lithium-ion batteries

2014 ◽  
Vol 2 (34) ◽  
pp. 14236-14244 ◽  
Author(s):  
Yurong Liu ◽  
Jing Bai ◽  
Xiaojian Ma ◽  
Jingfa Li ◽  
Shenglin Xiong
Keyword(s):  
Lithium Ion Batteries ◽  
Ostwald Ripening ◽  
Lithium Ion ◽  
Oriented Attachment ◽  
First Time

Quasi-mesocrystal ZnMn2O4 twin microspheres have been successfully prepared for the first time based on a distinctive oriented attachment accompanied by Ostwald ripening.

One-Step Hydrothermal Synthesis of (NH4)2V4O9 Thin Films Composed of Stacked Single-Crystal Nanosheets

2017 ◽  
Vol 863 ◽  
pp. 102-106
Author(s):  
Xue Mei Yang ◽  
Xiao Yu Zhou ◽  
Zhong Ping Liu ◽  
Lan Xiang Ji ◽  
Jian Guo Deng
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Band Gap ◽  
Oriented Attachment ◽  
Practical Applications ◽  
Crystal Growth Mechanism ◽  
Potential Applications ◽  
One Step ◽  
Vertically Aligned ◽  
Defect Densities

(NH4)2V4O9 thin films composed of vertically aligned single-crystal nanosheets were directly fabricated on quartz glass by a one-step hydrothermal method. In order to study the formation mechanism and to explore the potential applications of the thin films, process experiments were carried out and the band gap was analyzed. An oriented-attachment exfoliation–recrystallization–crystal growth mechanism was proposed for the formation of the (NH4)2V4O9 thin films. In addition, the band gap varied from 2.13 to 2.87 eV with variations in the thickness from 40.21 to 78.64 μm. The move of the band gap main due to the decreasing bond lengths and defect densities with increasing reaction time and which is significant for practical applications.

Sign in / Sign up

Export Citation Format

Share Document