Development of a new laser induced electron impact ionization source for studying the hot-wire chemical vapor deposition chemistry of silane–ammonia mixtures

2008 ◽  
Vol 23 (12) ◽  
pp. 1590 ◽  
Author(s):  
B. D. Eustergerling ◽  
M. Hedén ◽  
Y. J. Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Impact ◽  
Vapor Deposition ◽  
Impact Ionization ◽  
Chemical Vapor ◽  
Electron Impact Ionization ◽  
Hot Wire ◽  
Ionization Source ◽  
Electron Impact Ionization Source

Glow discharge electron impact ionization source for miniature mass spectrometers

2007 ◽  
Vol 42 (5) ◽  
pp. 675-680 ◽  
Author(s):  
Liang Gao ◽  
Qingyu Song ◽  
Robert J. Noll ◽  
Jason Duncan ◽  
R. Graham Cooks ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Electron Impact ◽  
Impact Ionization ◽  
Electron Impact Ionization ◽  
Ionization Source ◽  
Mass Spectrometers ◽  
Miniature Mass Spectrometers ◽  
Electron Impact Ionization Source

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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