Thermodynamic and kinetic control of crystal growth in CdS nanomaterials

2008 ◽  
Vol 18 (14) ◽  
pp. 1689 ◽  
Author(s):  
P. Christian ◽  
P. O'Brien
Keyword(s):  
Crystal Growth ◽  
Kinetic Control

scholarly journals Kinetic control on the distribution of secondary precipitates during CO2-basalt interactions

2019 ◽  
Vol 98 ◽  
pp. 04006 ◽  
Author(s):  
Helge Hellevang ◽  
Domenik Wolff-Boenisch ◽  
Mohammad Nooraiepour
Keyword(s):  
Spatial Distribution ◽  
Crystal Growth ◽  
Numerical Study ◽  
Numerical Models ◽  
Probabilistic Approach ◽  
Kinetic Control ◽  
Secondary Mineral ◽  
Mineral Growth ◽  
Secondary Precipitates ◽  
Overall Kinetics

A combined experimental and numerical study was undertaken to better understand the spatial distribution of secondary mineral growth along a basalt column. The work demonstrated that few and large crystals formed at random locations. This can only be explained in terms of an overall control by mineral nucleation. The main implication is that a new probabilistic approach must be developed in order to get the overall kinetics and the distribution of crystal growth in the numerical models right.

Undercooling-directed NaCl crystallization: an approach towards nanocavity-linked graphene networks for fast lithium and sodium storage

Nanoscale ◽  
2020 ◽  
Vol 12 (14) ◽  
pp. 7622-7630 ◽  
Author(s):  
Yaxin Chen ◽  
Liluo Shi ◽  
Da Li ◽  
Yue Dong ◽  
Qiong Yuan ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Inorganic Salts ◽  
Kinetic Control ◽  
Key Steps ◽  
Templated Materials ◽  
Sodium Storage

Despite the crystallization of inorganic salts being technologically related to the fabrication of salt-templated materials, the two key steps, nucleation and crystal growth, still lack the kinetic control to enable precise design of salt scaffolds.

The nature and significance of illite associated with quartz- hematite hydrothermal veins in the St. Austell pluton, Cornwall, England

Clay Minerals ◽  
2001 ◽  
Vol 36 (4) ◽  
pp. 585-597 ◽  
Author(s):  
A. Psyrillos ◽  
D. A. C. Manning ◽  
S. D. Burley
Keyword(s):  
Crystal Growth ◽  
Hydrothermal Fluids ◽  
Kinetic Control ◽  
Mineral Precipitation ◽  
Hydrothermal Veins

AbstractQuartz-hematite veins in the St. Austell pluton feature an assemblage of authigenic kaolin, illite, chlorite and hematite. Similar assemblages occur in altered granites adjacent to the veins. Complex textures in the veins and altered granites show that kaolin was an initial precipitate from hydrothermal fluids that was subsequently replaced by illite, hematite and chlorite. The sequence of mineral precipitation reflects a kinetic control on crystal growth, with early nonequilibrium precipitation of kaolin from fluids with compositions appropriate for the equilibrium formation of illite. Hematite formed under relatively oxidizing conditions that subsequently became more reducing to permit the late precipitation of chlorite. Illite associated with the quartz-hematite veins differs texturally, mineralogically and chemically from the coarsely crystalline hydrothermal muscovite (sericite or gilbertite) associated with quartz-tourmaline veins and greisen. Quartzhematite veins are thus considered to record a distinct mineralization event that is not related to the early greisenization or the economic kaolinization.

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Crystal Structures of Tetragonal NdPc2O and NdPc2Clx,O1-x Obtained from NdPc2H by Anodic Crystal Growth

1988 ◽  
Vol 156 (1) ◽  
pp. 247-256 ◽  
Author(s):  
Mireille Mossoyan-deneux ◽  
David Benlian ◽  
Andre Baldy ◽  
Marcel Pierrot
Keyword(s):  
Crystal Growth ◽  
Crystal Structures
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