Assembly and characterization of colloid-based antireflective coatings on multicrystalline silicon solar cells

2007 ◽  
Vol 17 (8) ◽  
pp. 791-799 ◽  
Author(s):  
Brian G. Prevo ◽  
Emily W. Hon ◽  
Orlin D. Velev
Solar Energy ◽  
2012 ◽  
Vol 86 (10) ◽  
pp. 3004-3008 ◽  
Author(s):  
Jie Liu ◽  
Bangwu Liu ◽  
Zenan Shen ◽  
Jinhu Liu ◽  
Sihua Zhong ◽  
...  

Author(s):  
C.-S. Jiang ◽  
H.R. Moutinho ◽  
S. Johnston ◽  
Y. Yan ◽  
M.M. Al-Jassim ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Chih-Hsiang Yang ◽  
Shui-Yang Lien ◽  
Chia-Ho Chu ◽  
Chung-Yuan Kung ◽  
Tieh-Fei Cheng ◽  
...  

Composite silicon dioxide-titanium dioxide (SiO2-TiO2) films are deposited on a large area of 15.6 × 15.6 cm2textured multicrystalline silicon solar cells to increase the incident light trapped within the device. For further improvement of the antireflective coatings (ARCs) quality, dimethylformamide (DMF) solution is added to the original SiO2-TiO2solutions. DMF solution solves the cracking problem, thus effectively decreasing reflectance as well as surface recombination. The ARCs prepared by sol-gel process and plasma-enhanced chemical vapor deposition (PECVD) on multicrystalline silicon substrate are compared. The average efficiency of the devices with improved sol-gel ARCs is 16.3%, only 0.5% lower than that of devices with PECVD ARCs (16.8%). However, from equipment depreciation point of view (the expiration date of equipment is generally considered as 5 years), the running cost (USD/watt) of sol-gel technique is 80% lower than that of PECVD method for the first five years and 66% lower than that of PECVD method from the start of the sixth year. This result proves that sol-gel-deposited ARCs process has potential applications in manufacturing low-cost, large-area solar cells.


2010 ◽  
Vol 1268 ◽  
Author(s):  
Juan Jimenez ◽  
Benito Moralejo ◽  
Vanesa Hortelano ◽  
Miguel Ángel González ◽  
Oscar Martínez ◽  
...  

AbstractThe photovoltaic market is currently dominated by multicrystalline silicon. However, this material is characterized by intrinsic structural heterogeneity due to point defects, dislocations and grain boundaries. In order to improve the cell performance the control of the electrical properties of the grain boundaries and dislocations is required. The laser beam induced current technique allows the estimation of the variations of the charge capture rates due to the different trapping centers, and is a powerful tool for the characterization of multicrystalline silicon solar cells. Nevertheless, one has to control the reflected light in order to obtain a reliable estimation of the electrical parameters.


2012 ◽  
Vol 21 ◽  
pp. 89-94 ◽  
Author(s):  
Elena Manea ◽  
Catalin Corneliu Parvulescu ◽  
Munizer Purica ◽  
Elena Budianu ◽  
Florin Comanescu

This paper presents the preparation and characterization of nanostructured TiO2 films designated to the integration of antireflective (AR) layers into the fabrication process of the silicon solar cells. The nanostructured titanium dioxide (TiO2) layers have been obtained by the anodization of the Ti layer deposited by sputtering technique on glass substrates and silicon wafers. The obtained TiO2 films were optically characterized using the Spectroscopic Ellipsometry (SE) and the values of the refractive index are in a range of 1.66-1.76 at 632 nm radiation wavelength. The transmittance of 90 nm TiO2 thin films deposited on transparent substrate, evaluated by the spectrophotometry method, is over 70%. The TiO2 band gap of 3.3 eV was evaluated from the spectral transmittance characteristic. Silicon solar cells with various AR coatings of TiO2, SiO2 and SiO2 - TiO2 have been fabricated. The optoelectrical characterization proved that the output maximum power (Pmax) for the solar cell with a 90 nm TiO2 layer is with 28% greater than Pmax for the solar cells with SiO2 as AR layer and with 15.5 % greater than Pmax for the solar cells having a two-layer antireflective coating of SiO2 - TiO2.


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