Electrochemically deposited Pd islands on an organic surface: the presence of Coulomb blockade in STM I(V) curves at room temperature

2006 ◽  
Vol 8 (29) ◽  
pp. 3375-3378 ◽  
Author(s):  
O. Shekhah ◽  
C. Busse ◽  
A. Bashir ◽  
F. Turcu ◽  
X. Yin ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Electrochemically Deposited

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

scholarly journals Towards Chloride-Free Organic Electrolytes for Rechargeable Aluminum Batteries

2021 ◽  
Author(s):  
Zaher Slim ◽  
Erik Menke
Keyword(s):  
Room Temperature ◽  
Practical Realization ◽  
Organic Electrolytes ◽  
Al Speciation ◽  
Electrochemically Deposited ◽  
Major Shortcoming ◽  
Experimental Approaches ◽  
High Consistency ◽  
Free Environment ◽  
Complex Ion

The corrosivity of chloride-based electrolytes is a major shortcoming in the practical realization of rechargeable aluminum batteries. Herein, the effect of Cl- on Al speciation and electrochemistry in tetrahydrofuran was measured by employing theoretical and experimental approaches for three systems: Al(OTF)3/THF, Al(OTF)3 plus LiCl in THF, and AlCl3/THF. The high consistency between measured and computed spectroscopic aspects associated with Al(OTF)3/THF electrolyte provided both a rationale for understanding Al complex-ion formation in a Cl- free environment and an approach for examining the effect of Cl- on Al speciation. Room-temperature Al plating was achieved from dilute solutions ([Al] = 0.1M) at potentials ≥ 0V (vs. Al⁄Al3+). Cl- is found to enable facile Al plating and SEM reveals that Al is electrochemically deposited as nanocrystalline grains.

Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Deposition ◽  
Dark Current ◽  
Room Temperature ◽  
Volume Ratio ◽  
Deposition Process ◽  
X Ray ◽  
Current Voltage ◽  
Electrochemically Deposited ◽  
A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

Low Voltage Nonlinear Conductance of Gold Nanowires: Room Temperature Coulomb Blockade Effect?

1998 ◽  
pp. 1-10 ◽  
Author(s):  
J. L. Costa-Krämer ◽  
N. Garcia ◽  
M. Jonson ◽  
I. V. Krive ◽  
H. Olin ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Low Voltage ◽  
Gold Nanowires ◽  
Nonlinear Conductance

Room-temperature Coulomb-blockade-dominated transport in gold nanocluster structures

1998 ◽  
Vol 13 (8A) ◽  
pp. A111-A114 ◽  
Author(s):  
L Clarke ◽  
M N Wybourne ◽  
L O Brown ◽  
J E Hutchison ◽  
M Yan ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Gold Nanocluster

Study of Electrical Properties of Ge-Nanocrystalline Films Deposited by Cluster-Beam Evaporation Technique

1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Electrical Properties ◽  
Liquid Nitrogen ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Cluster Beam ◽  
Nanocrystalline Films ◽  
Current Voltage ◽  
Evaporation Technique

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.

Sign in / Sign up

Export Citation Format

Share Document