Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water

2005 ◽  
Vol 15 (23) ◽  
pp. 2271 ◽  
Author(s):  
Jaakko Niinistö ◽  
Matti Putkonen ◽  
Lauri Niinistö ◽  
Sarah L. Stoll ◽  
Kaupo KukliAlso at: University of Tartu, ◽  
...  
ChemInform ◽  
2010 ◽  
Vol 30 (38) ◽  
pp. no-no
Author(s):  
Mikko Ritala ◽  
Pia Kalsi ◽  
Diana Riihelae ◽  
Kaupo Kukli ◽  
Markku Leskelae ◽  
...  

1999 ◽  
Vol 315-317 ◽  
pp. 216-221 ◽  
Author(s):  
K. Kukli ◽  
M. Peussa ◽  
L.-S. Johansson ◽  
E. Nykänen ◽  
L. Niinistö

2018 ◽  
Vol 337 ◽  
pp. 404-410 ◽  
Author(s):  
Soonyoung Jung ◽  
Dip K. Nandi ◽  
Seungmin Yeo ◽  
Hyungjun Kim ◽  
Yujin Jang ◽  
...  

2016 ◽  
Vol 168 ◽  
pp. 218-222 ◽  
Author(s):  
Jun Beom Kim ◽  
Byeonghyeon Jang ◽  
Hyun-Jung Lee ◽  
Won Seok Han ◽  
Do-Joong Lee ◽  
...  

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

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