Effect of substitution of 3,4-ethylenedioxythiophene (EDOT) on the electronic properties of the derived electrogenerated low band gap conjugated polymersElectronic supplementary information (ESI) available: experimental and spectroscopic data. See http://www.rsc.org/suppdata/jm/b4/b403818e/

2004 ◽  
Vol 14 (11) ◽  
pp. 1679 ◽  
Author(s):  
Igor F. Perepichka ◽  
Eric Levillain ◽  
Jean Roncali
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Spectroscopic Data ◽  
Supplementary Information ◽  
Low Band Gap

Synthesis and Electronic Properties of Poly(2-phenylthieno[3,4-b]thiophene):  A New Low Band Gap Polymer

1999 ◽  
Vol 11 (8) ◽  
pp. 1957-1958 ◽  
Author(s):  
C. J. Neef ◽  
I. D. Brotherston ◽  
J. P. Ferraris
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Low Band Gap ◽  
Low Band Gap Polymer

An Assessment of a-SiGe:H Alloys with a Band GaP of 1.5Ev as to their Suitability for Solar Cell Applications

1985 ◽  
Vol 49 ◽  
Author(s):  
B. Von Roedern ◽  
A.H. Mahan ◽  
T.J. McMahon ◽  
A. Madan
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Silicon Germanium ◽  
Preferential Attachment ◽  
Hydrogenated Amorphous Silicon ◽  
Single Layer ◽  
Low Band Gap ◽  
Amorphous Silicon Germanium ◽  
Conversion Efficiencies ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium alloys a-Si1-xGex:H are being actively investigated for their application as a low band gap material in cascade solar cells [1,2]. To date, such alloys produce material of reasonable electronic quality only if the Ge-content is kept low (<40 at.%) such that the band gap is not decreased much below 1.5 eV. Conversion efficiencies of -5% have been obtainedwith alloys having such a band gap, and tandem cells have shown conversion efficiencieswhich are lower than those of good quality single layer a-Si:H devices. Thus, the performance of alloys is well below that necessary to achieve conversion efficiencies of >16%, which are ultimately hoped to be obtained using the cascade approach [2]. Other low band gap alloys such as a-Si1-xSnx:H have been shown to be even less suitable with regard to their electronic properties [3]. The cause of the degradation in electronic properties with increased alloying is not yet understood. Factors such as preferential attachment of H to Si rather than Ge [4] or microstructure observed in alloys have been suggested as a cause for the electronic degradation, [5,6] but no unique correlations have been established between such findings and the electronic properties.

scholarly journals Theoretical analysis of [5.5.6]cyclacenes: electronic properties, strain energies and substituent effects

2015 ◽  
Vol 17 (11) ◽  
pp. 7366-7372 ◽  
Author(s):  
Birgit Esser
Keyword(s):  
Theoretical Analysis ◽  
Band Gap ◽  
Electronic Properties ◽  
Substituent Effects ◽  
Ground States ◽  
Closed Shell ◽  
Band Gaps ◽  
Low Band Gap ◽  
Effect Of Substituents ◽  
Electronic Ground

[5.5.6]nCyclacenes are proposed as low band gap, closed-shell materials and theoretically investigated regarding their structures, strain energies, aromaticity, electronic ground states, band gaps, and the effect of substituents.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Low band gap-conjugated polymer derivatives

2005 ◽  
Vol 155 (3) ◽  
pp. 618-622 ◽  
Author(s):  
Chun-Guey Wu ◽  
Chnug-Wei Hsieh ◽  
Ding-Chou Chen ◽  
Shinn-Jen Chang ◽  
Kuo-Yu Chen
Keyword(s):  
Band Gap ◽  
Conjugated Polymer ◽  
Low Band Gap

scholarly journals Development and Assessment of Quinoidal Index for Designing of Low Band Gap Polymers

2017 ◽  
Vol 16 (5) ◽  
pp. 123-125 ◽  
Author(s):  
Kota OTSUKI ◽  
Yoshihiro HAYASHI ◽  
Susumu KAWAUCHI
Keyword(s):  
Band Gap ◽  
Low Band Gap ◽  
Low Band Gap Polymers
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