Crystallization kinetics of thin amorphous water films on surfaces: Theory and computer modeling

2004 ◽  
Vol 6 (8) ◽  
pp. 1890-1898 ◽  
Author(s):  
Peter Ahlström ◽  
Patrik Löfgren ◽  
Jukka Lausma ◽  
Bengt Kasemo ◽  
Dinko Chakarov
Langmuir ◽  
2003 ◽  
Vol 19 (2) ◽  
pp. 265-274 ◽  
Author(s):  
Patrik Löfgren ◽  
Peter Ahlström ◽  
Jukka Lausma ◽  
Bengt Kasemo ◽  
Dinko Chakarov

2000 ◽  
Vol 112 (13) ◽  
pp. 5932-5941 ◽  
Author(s):  
Z. Dohnálek ◽  
Greg A. Kimmel ◽  
Ryan L. Ciolli ◽  
K. P. Stevenson ◽  
R. Scott Smith ◽  
...  

2019 ◽  
Vol 21 (3) ◽  
pp. 1123-1130 ◽  
Author(s):  
Ryutaro Souda ◽  
Takashi Aizawa

The nucleation and growth processes of ice crystallites on Pt(111) and how they are influenced by O and CO adspecies are explored using TOF-SIMS, TPD, and RHEED.


2020 ◽  
Author(s):  
Liyuan Wang ◽  
Jiaxi Liu ◽  
Nan Lu ◽  
Zengchao Yang ◽  
Gang He ◽  
...  

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.


Author(s):  
Pratim Kumar Patra ◽  
Aanchal Jaisingh ◽  
Vishal Goel ◽  
Gurpreet Singh Kapur ◽  
Leena Nebhani

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