Ostwald ripening in two dimensions: Time dependence of size distributions for thin-film islands

2003 ◽  
Vol 5 (24) ◽  
pp. 5459 ◽  
Author(s):  
Giridhar Madras ◽  
Benjamin J. McCoy
Keyword(s):  
Thin Film ◽  
Time Dependence ◽  
Ostwald Ripening ◽  
Two Dimensions ◽  
Size Distributions

Additive controlled crystallization of barium titanate powders and their application for thin-film ceramic production: Part I. Powder Synthesis

2001 ◽  
Vol 16 (7) ◽  
pp. 1901-1910 ◽  
Author(s):  
B. Grohe ◽  
G. Miehe ◽  
G. Wegner
Keyword(s):  
Thin Film ◽  
Barium Titanate ◽  
Crystallization Process ◽  
Ostwald Ripening ◽  
Ceramic Production ◽  
Size Distributions ◽  
Particle Size Distributions ◽  
Powder Synthesis ◽  
Controlled Crystallization ◽  
Production Part

Stoichiometric barium titanate (BaTiO3) was synthesized in aqueous solution with acetone and/or methanol as additives to control the crystallization process. Adjusted nano-sized particles and narrow particle size distributions were achieved at 60 °C with additive concentrations up to 243 ml/ l. The growth kinetics showed that the additives influence the nucleation of the BaTiO3 particles and tend to suppress Ostwald ripening.

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects

2002 ◽  
Vol 717 ◽  
Author(s):  
Masashi Uematsu
Keyword(s):  
Time Dependence ◽  
Diffusion Model ◽  
Low Dose ◽  
Ostwald Ripening ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Transient Enhanced Diffusion ◽  
High Dose Implantation ◽  
Medium Dose

AbstractThe transient enhanced diffusion (TED) of high-dose implanted P is simulated taking into account Ostwald ripening of end-of-range (EOR) defects. First, we integrated a basic diffusion model based on the simulation of in-diffusion, where no implanted damages are involved. Second, from low-dose implantation, we developed a model for TED due to {311} self-interstitial (I) clusters involving Ostwald ripening and the dissolution of {311} clusters. Third, from medium-dose implantation, we showed that P-I clusters should be taken into account, and during the diffusion, the clusters are dissolved to emit self-interstitials that also contribute to TED. Finally, from high-dose implantation, EOR defects are modeled and we derived a formula to describe the time-dependence for Ostwald ripening of EOR defects, which is more significant at higher temperatures and longer annealing times. The simulation satisfactorily predicts the TED for annealing conditions, where the calculations overestimate the diffusion without taking Ostwald ripening into account.

Time dependence of magnetization reversal influenced by current in perpendicularly magnetized Co/Pt thin film

2008 ◽  
Vol 104 (8) ◽  
pp. 083907 ◽  
Author(s):  
K. X. Xie ◽  
W. W. Lin ◽  
H. C. Sun ◽  
Y. Nie ◽  
H. Sang
Keyword(s):  
Thin Film ◽  
Time Dependence ◽  
Magnetization Reversal

A numerical scheme for particle-laden thin film flow in two dimensions

2011 ◽  
Vol 230 (16) ◽  
pp. 6334-6353 ◽  
Author(s):  
Matthew R. Mata ◽  
Andrea L. Bertozzi
Keyword(s):  
Thin Film ◽  
Numerical Scheme ◽  
Film Flow ◽  
Two Dimensions ◽  
Thin Film Flow
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