Heterogeneous reaction route to CuInS2 thin films

2002 ◽  
pp. 1400-1401 ◽  
Author(s):  
Ming Lin ◽  
Kian Ping Loh ◽  
Theivanayagam C. Deivaraj ◽  
Jagadese J. Vittal
2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour

Nanomaterials ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 405 ◽  
Author(s):  
Anna Frank ◽  
Jan Grunwald ◽  
Benjamin Breitbach ◽  
Christina Scheu

2015 ◽  
Vol 44 (4) ◽  
pp. 805-807 ◽  
Author(s):  
Wang Ligang ◽  
Wang Yanlai ◽  
Yao Wei ◽  
Zhu Jun ◽  
Xu Jingang

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro ◽  
Aloysius F. Hepp ◽  
Philip P. Jenkins ◽  
Mark A. Stan

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.


2005 ◽  
Vol 40 (21) ◽  
pp. 5751-5755 ◽  
Author(s):  
F. Chaffar Akkari ◽  
R. Brini ◽  
M. Kanzari ◽  
B. Rezig

2022 ◽  
Vol 137 ◽  
pp. 106224
Author(s):  
Shanna-Kay Ming ◽  
Richard A. Taylor ◽  
Paul O'Brien ◽  
Paul D. McNaughter ◽  
David J. Lewis

2019 ◽  
Vol 30 (24) ◽  
pp. 21096-21105
Author(s):  
Ahmed Kotbi ◽  
Bouchaib Hartiti ◽  
Salah Fadili ◽  
Abderraouf Ridah ◽  
Philippe Thevenin

2001 ◽  
Vol 382 (1-2) ◽  
pp. 39-46 ◽  
Author(s):  
M.C Zouaghi ◽  
T.Ben Nasrallah ◽  
S Marsillac ◽  
J.C Bernède ◽  
S Belgacem

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