Synthesis, structure and thermal stability of tellurium oxides and oxide sulfate formed from reactions in refluxing sulfuric acid †

Author(s):  
Mohammad A. K. Ahmed ◽  
Helmer Fjellvåg ◽  
Arne Kjekshus
2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Salma Gul ◽  
Anwar-ul-Haq Ali Shah ◽  
Salma Bilal

A comprehensive study of thermally treated polyaniline in its emeraldine salt form is presented here. It offers an understanding of the thermal stability of the polymer. Emeraldine salt was prepared by a novel emulsion polymerization pathway using dodecylbenzene sulfonic acid and sulfuric acid together as dopants. The effect of temperature and heating rate on the degradation of this emeraldine salt was studied via thermogravimetric analysis. The thermally analyzed sample was collected at various temperatures, that is, 250, 490, 500, and 1000°C. The gradual changes in the structure of the emeraldine salt were followed through cyclic voltammetry, Fourier transform infrared spectroscopy, and ultraviolet-visible spectroscopy. Results demonstrate that emeraldine salt shows high thermal stability up to 500°C. This is much higher working temperature for the use of emeraldine salt in higher temperature applications. Further heat treatment seems to induce deprotonation in emeraldine salt. Cyclic voltammetry and ultraviolet-visible spectroscopy revealed that complete deprotonation takes place at 1000°C where it loses its electrical conductivity. It is interesting to note that after the elimination of the dopants, the basic backbone of emeraldine salt was not destroyed. The results reveal that the dopants employed have a stability effect on the skeleton of emeraldine salt.


2010 ◽  
Vol 160-162 ◽  
pp. 1405-1408 ◽  
Author(s):  
Qing Ming Jia ◽  
Shao Yun Shan ◽  
Li Hong Jiang ◽  
Ya Ming Wang

Polyaniline(PANI) nanofibers were firstly prepared by rapid mixture method, EP/PANI nanocomposite was obtained by in-situ adding the PANI nanofibers to epoxy resin(EP). Scanning electron microscopy(SEM) proves that the type of doped acids has a little effect on the morphologies of PANI, and the PANI doped by different acids present nanofiber structures with the diameter of about 50 nm. The thermal behaviour of EP/PANI nanocomposites were investigated in detail by using a dynamic rate mode of thermogravimetric analyser (TGA) in inert atmosphere, and the results show that the PANI nanofibers obviously improve thermal stability of pure EP. Compared with EP/PANI doped by nitric acid or sulfuric acid, EP/PANI doped by phosphoric acid has best thermal stability.


2014 ◽  
Vol 625 ◽  
pp. 280-284 ◽  
Author(s):  
Katsumi Katoh ◽  
Eiko Higashi ◽  
Tei Saburi ◽  
Shunsuke Ito ◽  
Yuji Wada ◽  
...  

Nitrocellulose (NC) is known to undergo spontaneous ignition, and its thermal stability has been previously reported to decrease in the presence of sulfuric acid. In this study, we evaluated the decomposition and ignition behavior of NC in the presence of sulfuric acid using an accelerating rate calorimeter (ARC) and hand-built ignition testing equipment. The results of the ARC experiment indicated that the thermal stability of NC decreased when the amount of sulfuric acid was increased above 10-5 mol/g (NC). In addition, when NC (4 g) mixed with sulfuric acid (6.6 mol/L, 1 g) was isothermally stored at 75°C in a glass flask, the color of the reaction mixture changed from white to brown. After 83–127 min, NC spontaneously ignited and produced a loud explosion.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  

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