In situ generation and synthetic applications of anhydrous hydrogen fluoride in a solid-liquid biphasic system

Author(s):  
Gadi Rothenberg ◽  
Michael Royz ◽  
Onn Arrad ◽  
Yoel Sasson
1993 ◽  
Vol 318 ◽  
Author(s):  
Pushkar P. Apte ◽  
Heungsoo Park ◽  
Krishna C. Saraswat ◽  
C. R. Helms

ABSTRACTIn-situ native-oxide removal is critical for epitaxial single-crystal silicon deposition, for polysilicon emitters and contacts and for ultrathin gate dielectric films in integrated circuit (IC) fabrication. We have developed an in-situ, thermally-driven, anhydrous hydrogen fluoride (AHF)-based native-oxide removal technique in which the wafer is treated by AHF at low temperatures (300-400°C) and a short (10 sec) 950°C ‘spike’ in AHF-H2 immediately prior to Si deposition. This process removes native oxides formed by standard wet cleans such as HC1:H202 and NH4OH:H202, as well as native oxides formed by the clean-room ambient. Further, the technique is an effective pre-clean for both polysilicon and epitaxial silicon deposition. This flexibility, combined with other salient features such as simplicity and a low thermal budget, make the process eminently suited for IC fabrication.


Author(s):  
Kazumasa Funabiki ◽  
Toshiya Gotoh ◽  
Ryunosuke Kani ◽  
Toshiyasu Inuzuka ◽  
Yasuhiro Kubota

A highly diastereo- and enantioselective organocatalytic method to synthesise erythritols bearing a trifluoromethyl group has been investigated.


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