Low temperature crystal and electronic band structure of the (BEDO–TTF)2Cl1.28(H3O)0.282.44H2O stable organic metal

1998 ◽  
Vol 8 (5) ◽  
pp. 1151-1156 ◽  
Author(s):  
Rimma P. Shibaeva ◽  
Salavat S. Khasanov ◽  
Bakhyt Z. Narymbetov ◽  
Leokadiya V. Zorina ◽  
Larisa P. Rozenberg ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Organic Metal ◽  
Electronic Band

Electronic band structure and low-temperature transport properties of the type-I clathrate Ba8NixGe46−x−y□y

2015 ◽  
Vol 44 (16) ◽  
pp. 7524-7537 ◽  
Author(s):  
U. Aydemir ◽  
C. Candolfi ◽  
A. Ormeci ◽  
M. Baitinger ◽  
U. Burkhardt ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Structure ◽  
Transport Properties ◽  
Homogeneity Range ◽  
Electronic Band Structure ◽  
Type I ◽  
Electronic Band ◽  
Comprehensive Study

This work reports a comprehensive study of the low-temperature transport properties of the type-I clathrates Ba8NixGe46−x−y□y in the homogeneity range (0 ≤ x ≤ 4.1).

Crystal and electronic band structure of the organic metal (ET)4Cl2�4H2O

1991 ◽  
Vol 32 (1) ◽  
pp. 79-83
Author(s):  
R. P. Shibaeva ◽  
L. P. Rozenberg ◽  
A. F. Shestyakov ◽  
T. A. Khannanova
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Organic Metal ◽  
Electronic Band

Optical Characterization of Electronic Structure of CuInS2 and CuAlS2 Chalcopyrite Crystals

2011 ◽  
Vol 170 ◽  
pp. 21-24
Author(s):  
Ching Hwa Ho ◽  
Sheng Feng Lo ◽  
Ping Chen Chi ◽  
Ching Cherng Wu ◽  
Ying Sheng Huang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Low Temperature ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Interband Transition ◽  
Optical Characterization ◽  
Band Edge ◽  
Interband Transitions ◽  
Electronic Band

Electronic structure of solar-energy related crystals of CuInS2 and CuAlS2 has been characterized using thermoreflectance (TR) measurement in the energy range between 1.25 and 6 eV. The TR measurements were carried out at room (~300 K, RT) and low (~30 K, LT) temperatures. A lot of interband transition features including band-edge excitons and higher-lying interband transitions were simultaneously detected in the low-temperature TR spectra of CuInS2 and CuAlS2. The energies of band-edge excitonic transitions at LT (RT) were analysed and determined to be =1.545 (1.535) and =1.554 eV (1.545 eV) for CuInS2, and =3.514 (3.486), =3.549 (3.522), and =3.666 eV (3.64 eV) for CuAlS2, respectively. The band-edge transitions of the and excitons are originated from the sulfur pp transitions in CuInS2 and CuAlS2 separated by crystal-field splitting. Several high-lying interband transitions were detected in the TR spectra of CuInS2 and CuAlS2 at LT and RT. Transition origins for the high-lying interband transitions are evaluated. The dependence of electronic band structure in between the CuInS2 and CuAlS2 is analysed and discussed.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

THE ELECTRONIC BAND STRUCTURE OF V3Ga AND V3Si

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band
Sign in / Sign up

Export Citation Format

Share Document