Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts
2018 ◽
Vol 105
◽
pp. 6-13
◽
Keyword(s):
2018 ◽
Vol 110
◽
pp. 71-77
◽
Keyword(s):
2018 ◽
Vol 51
(6)
◽
pp. 065110
◽
Keyword(s):
Keyword(s):