scholarly journals Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sajjad Hussain ◽  
Jai Singh ◽  
Dhanasekaran Vikraman ◽  
Arun Kumar Singh ◽  
Muhammad Zahir Iqbal ◽  
...  
Keyword(s):  
Rf Sputtering ◽  
Large Area ◽  
Post Deposition Annealing ◽  
Post Deposition ◽  
Annealing Method

Layer-modulated, wafer scale and continuous ultra-thin WS2 films grown by RF sputtering via post-deposition annealing

2016 ◽  
Vol 4 (33) ◽  
pp. 7846-7852 ◽  
Author(s):  
Sajjad Hussain ◽  
Muhammad Farooq Khan ◽  
Muhammad Arslan Shehzad ◽  
Dhanasekaran Vikraman ◽  
Muhammad Zahir Iqbal ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Large Area ◽  
Post Deposition Annealing ◽  
Wafer Scale ◽  
Post Deposition ◽  
Insulating Substrates

Synthesis of large-area WS2 films by direct sulfurization of RF-sputtered WO3 thin films on insulating substrates.

Effects of Post-Deposition Processing on the Ultimate Grain Size in Metastable Semiconductor Thin Films to be Used in IR Detectors

1994 ◽  
Vol 343 ◽  
Author(s):  
Susanne M Lee
Keyword(s):  
Thin Films ◽  
Thick Films ◽  
Rf Sputtering ◽  
Solubility Limit ◽  
Nucleation And Growth ◽  
Separation Mechanism ◽  
Post Deposition Annealing ◽  
Ir Detectors ◽  
Solid Solubility Limit ◽  
Post Deposition

ABSTRACTThrough post-deposition annealing in a differential scanning calorimeter (DSC), we have manufactured both thin (200 nm) and bulk (8000 nm) single phase films of crystalline Ge1–xSnx, using rf sputtering. The Sn concentrations produced ranged up to 31 at.%, well beyond the solid solubility limit of this system. There was a marked difference, in the asdeposited structure, between thick and thin films produced under the same deposition conditions. Quantitative models for both systems are given in this paper and were deduced frorn DSC measurements in conjunction with electron microscopy. The metastable crystalline state in the thin films formed by nucleation and growth from an amorphous phase; whereas in the thick films, the desired phase was already present in the as-deposited films and only growth of preexisting grains was observed upon post-deposition annealing. When annealed to high temperature, the Sn phase separates from the alloys and we postulate here that it does so by nucleation and growth of β-Sn. With this hypothesis, the Sn separation in the 8000 nm thick films was accurately modeled by a two-mechanism process, however, in the 200 nm thick films, only one phase separation mechanism was necessary to accurately fit the data. Both models were corroborated by the subsequent melting behavior of the phase separated Sn which, though it varied depending on the sample being measured, always exhibited a melting endotherm starting 25–35°C lower than the bulk melting temperature of Sn. Speculation on the reasons for this are presented.

Influence of post-deposition annealing on structural, optical and electrical characteristics of NiO/ZnO thin film hetero-junction

2012 ◽  
Vol 1394 ◽  
Author(s):  
Manisha Tyagi ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Electronic Device ◽  
Forward Bias ◽  
Visible Region ◽  
Rf Sputtering ◽  
Reverse Current ◽  
Annealing Treatment ◽  
Xrd Analysis ◽  
Device Fabrication ◽  
Post Deposition Annealing ◽  
Post Deposition

ABSTRACTTransparent p-n hetero-junction diodes are fabricated using, p-type NiO and n-type ZnO thin films deposited onto a Pt/Ti/glass substrate utilizing RF sputtering technique. The prepared hetero-junctions are studied for the structural, electrical and optical properties and the effect of post-deposition annealing is investigated through I-V measurements and XRD analysis. The as deposited hetero-junction is found to be giving ohmic behaviour while with post-annealing treatment it result in rectification with a ratio of forward-to-reverse current as high as 15 in the range -1.0 to 1.0 V. Forward threshold and the reverse breakdown voltages are found to be about 0.5 and -2.7 V, respectively. The forward-bias I-V characteristics are dominated by the flow of space-charge-limited current with an optical transmission of above 50 % in the visible region important for the transparent electronic device fabrication.

Control of Phase in Tin Sulfide Thin Films Produced via RF-Sputtering of SnS2 Target with Post-deposition Annealing

2015 ◽  
Vol 45 (1) ◽  
pp. 499-508 ◽  
Author(s):  
R.E. Banai ◽  
J.C. Cordell ◽  
G. Lindwall ◽  
N.J. Tanen ◽  
S.-L. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Tin Sulfide ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

2020 ◽  
Vol 8 ◽  
pp. 970-975 ◽  
Author(s):  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Zhuangzhuang Hu ◽  
Zhaoqing Feng ◽  
Hepeng Zhang ◽  
...  
Keyword(s):  
Surface Treatments ◽  
Interfacial Property ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

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