scholarly journals Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Shu-Ju Tsai ◽  
Chiang-Lun Wang ◽  
Hung-Chun Lee ◽  
Chun-Yeh Lin ◽  
Jhih-Wei Chen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Atomic Beam ◽  
High Performance ◽  
Gate Dielectric ◽  
Amorphous Silicon Nitride ◽  
Atomic Beam Deposition ◽  
Beam Deposition

Anomalous Behavior of Semi-Insulating Silicon Rich Amorphous Silicon Nitride

1992 ◽  
Vol 284 ◽  
Author(s):  
J. B. Bernstein ◽  
E. F. Gleason ◽  
A. E. Wetsel ◽  
E. Z. Liu ◽  
P. W. Wyatt
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Gate Dielectric ◽  
Anomalous Behavior ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Amorphous Silicon Nitride ◽  
Long Time ◽  
Applied Fields ◽  
Barrier Characteristic

ABSTRACTSilicon rich PECVD amorphous silicon nitride has been used as an inter-level metal dielectric for making laser programmable connections on restructurable VLSI. There is an apparent Schottky barrier characteristic that has a 0.11 eV lower barrier for Ti than for Al. The stoichiometry was analyzed using RBS and HFS, and found to contain approximately 55% Si, 25% N, and 20% H by atomic percentages. The optical bandgap is 2.01 eV as found by the Tauc method.The insulating behavior depends on time in an anomalous manner at applied fields greater than about 0.2 MV/cm, whereby the current increases with time for several secondsuntil it reaches an equilibrium value. The current decays in a normal charging manner at lower fields and in samples with insulating sub-layers between the electrodes and thenitride. When used as a gate dielectric, there is a long-time charging behavior that shifts the flat band voltage in the opposite direction of the applied stress. This shift is indicative of polarization within the dielectric. This behavior is similar to that of a reverse biased a-Si:H p-i-n diode.

PECVD Amorphous Silicon Nitride at 120°C for a-Si:H TFTs.

2001 ◽  
Vol 685 ◽  
Author(s):  
Denis Stryahilev ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Electrical Resistivity ◽  
Silicon Nitride ◽  
Physical Properties ◽  
Amorphous Silicon ◽  
Breakdown Voltage ◽  
Hydrogen Concentration ◽  
Gate Dielectric ◽  
Electrical Characterization ◽  
Gas Mixture ◽  
Amorphous Silicon Nitride

AbstractThe effect of a-SiNx films stoichiometry and their physical properties on the electrical integrity and masking ability is studied. The films are deposited at 120° C by 13.56 MHz PECVD from SiH4+NH3 + N2 gas mixture. They have the N/Si ratio of 1.4 to 1.7 and hydrogen concentration of 25 to 40 at.%. The electrical characterization was carried out by I-V measurements. An electrical resistivity of ∼1016 Ohm-cm and breakdown voltage of 5.5 MV/cm have been achieved for our PECVD nitride films. The performance of a-Si:H TFTs with these silicon nitride as the gate dielectric and passivation layer has been also evaluated.

Optimization of 75°C amorphous silicon nitride for TFTs on plastics

2003 ◽  
Vol 769 ◽  
Author(s):  
Christian McArthur ◽  
Mark Meitine ◽  
Andrei Sazonov
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Compressive Stress ◽  
Gas Flow ◽  
Gate Dielectric ◽  
Large Area ◽  
Film Properties ◽  
Amorphous Silicon Nitride ◽  
Electrical Stress ◽  
Deposition Conditions

AbstractAmorphous silicon nitride (a-SiNx) is widely used as the gate dielectric and passivation layer in a-Si:H based electronics. For devices on plastic substrates deposited at low temperature, the a-SiNx quality seems to determine the device performance. This paper investigates the effects of hydrogen dilution, helium dilution, ammonia-silane gas flow ratio, and RF power on the properties of PECVD silicon nitrides deposited in large-area parallel-plate reactors at substrate temperatures of 75°C. The chemical composition and bonding of the SiNx:H films was studied using FTIR spectroscopy. The physical properties were investigated, and the density, growth rate, and compressive stress of the films were determined. The electrical properties such as leakage current, breakdown, stability, trap density, and dielectric constant of the films were characterized by I-V and C-V measurements of metal-insulator semiconductor (MIS) structures. Analysis of Variance (ANOVA) was performed on the results, and the deposition conditions for the optimal film properties were determined. The optimum film had SiNx:H stoichiometry of x=1.56 with hydrogen concentrations of 17 at.%, and exhibited compressive stress of -220 MPa. The film displayed good stability under electrical stress with ohmic leakage of Rleak ∼1016 Ωcm. Strong relationships between the film properties and deposition conditions were observed, and are discussed within the paper. A-Si:H bottom gate TFTs were fabricated using the optimized nitrides for gate dielectrics and passivation layers, and the influence of a-SiNx on TFT performance is discussed.

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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