scholarly journals Radio frequency spectral characterization and model parameters extraction of high Q optical resonators

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Zeina Abdallah ◽  
Yann G. Boucher ◽  
Arnaud Fernandez ◽  
Stéphane Balac ◽  
Olivier Llopis
2020 ◽  
Vol 96 (3s) ◽  
pp. 612-614
Author(s):  
В.В. Елесина ◽  
И.О. Метелкин

Проведен анализ случаев возникновения тиристорного эффекта в СВЧ ИС, изготовленных по технологии SiGe БиКМОП, при воздействии ионизирующего излучения. Рассмотрены области СВЧ ИС, чувствительные к возникновению ТЭ, определены основные параметры тиристорных структур. Проведена апробация подхода к восстановлению параметров схемно-топологической радиационно-ориентированной модели тиристорной структуры для САПР. The paper analyzes ionizing radiation induced latchup in microwave SiGe BiCMOS integrated circuits (ICs). Critical parts of ICs sensitive to latchup have been identified and basic parameters of corresponding parasitic thyristor structures have been determined. An approach has been approved to the thyristor structure compact model parameters extraction procedure intended for use in CAD systems.


Author(s):  
Yevgeny Shamin ◽  
Dmitry Zhevnenko ◽  
Fedor Meschaninov ◽  
Vladislav Kozhevnikov ◽  
Yevgeny Gornev

The work is devoted to the analysis of various approaches to the problem of the empirical memristor model parameters extraction. A description of the peculiarities of the extraction process is given, and an original version of the extraction algorithm is proposed. The proposed algorithm is compared with other considered ones.


2014 ◽  
Vol 22 (23) ◽  
pp. 28169 ◽  
Author(s):  
Maria V. Chistiakova ◽  
Andrea M. Armani
Keyword(s):  

Solar Energy ◽  
2017 ◽  
Vol 155 ◽  
pp. 478-489 ◽  
Author(s):  
Abdelkader Abbassi ◽  
Rabiaa Gammoudi ◽  
Mohamed Ali Dami ◽  
Othman Hasnaoui ◽  
Mohamed Jemli

Sign in / Sign up

Export Citation Format

Share Document