scholarly journals Strong Surface Orientation Dependent Thermal Transport in Si Nanowires

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yanguang Zhou ◽  
Yuli Chen ◽  
Ming Hu
Keyword(s):  
Thermal Transport ◽  
Surface Orientation ◽  
Si Nanowires ◽  
Strong Surface

scholarly journals Tuning thermal transport in Si nanowires by isotope engineering

2016 ◽  
Vol 18 (37) ◽  
pp. 26262-26267 ◽  
Author(s):  
Miquel Royo ◽  
Riccardo Rurali
Keyword(s):  
Thermal Conductivity ◽  
Low Temperature ◽  
Thermal Transport ◽  
Si Nanowires

The thermal conductivity of 28Six30Si1−x nanowires is reduced up to ∼20% (∼50%) at room (low) temperature with respect to isotope purfied nanowires.

scholarly journals Thermal transport in porous Si nanowires from approach-to-equilibrium molecular dynamics calculations

2016 ◽  
Vol 109 (1) ◽  
pp. 013107 ◽  
Author(s):  
Xavier Cartoixà ◽  
Riccardo Dettori ◽  
Claudio Melis ◽  
Luciano Colombo ◽  
Riccardo Rurali
Keyword(s):  
Molecular Dynamics ◽  
Thermal Transport ◽  
Approach To Equilibrium ◽  
Porous Si ◽  
Si Nanowires ◽  
Molecular Dynamics Calculations

scholarly journals Anomalous diameter dependence of thermal transport in ultra-narrow Si nanowires

2014 ◽  
Vol 115 (2) ◽  
pp. 024302 ◽  
Author(s):  
Hossein Karamitaheri ◽  
Neophytos Neophytou ◽  
Hans Kosina
Keyword(s):  
Thermal Transport ◽  
Si Nanowires

scholarly journals Phonons and Thermal Transport in Si/SiO2 Multishell Nanotubes: Atomistic Study

2021 ◽  
Vol 11 (8) ◽  
pp. 3419
Author(s):  
Calina Isacova ◽  
Alexandr Cocemasov ◽  
Denis L. Nika ◽  
Vladimir M. Fomin
Keyword(s):  
Thermal Conductivity ◽  
Thermal Transport ◽  
Phonon Scattering ◽  
Geometrical Parameters ◽  
Boltzmann Transport ◽  
Si Nanowires ◽  
Relaxation Time Approximation ◽  
Atomistic Lattice ◽  
Key Factor ◽  
Atomistic Study

Thermal transport in the Si/SiO2 multishell nanotubes is investigated theoretically. The phonon energy spectra are obtained using the atomistic lattice dynamics approach. Thermal conductivity is calculated using the Boltzmann transport equation within the relaxation time approximation. Redistribution of the vibrational spectra in multishell nanotubes leads to a decrease of the phonon group velocity and the thermal conductivity as compared to homogeneous Si nanowires. Phonon scattering on the Si/SiO2 interfaces is another key factor of strong reduction of the thermal conductivity in these structures (down to 0.2 Wm−1K−1 at room temperature). We demonstrate that phonon thermal transport in Si/SiO2 nanotubes can be efficiently suppressed by a proper choice of nanotube geometrical parameters: lateral cross section, thickness and number of shells. We argue that such nanotubes have prospective applications in modern electronics, in cases when low heat conduction is required.

scholarly journals Monte Carlo study of temperature-dependent non-diffusive thermal transport in Si nanowires

2017 ◽  
Vol 124 ◽  
pp. 17-21 ◽  
Author(s):  
Lei Ma ◽  
Riguo Mei ◽  
Mengmeng Liu ◽  
Xuxin Zhao ◽  
Qixing Wu ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Thermal Transport ◽  
Monte Carlo Study ◽  
Si Nanowires ◽  
Temperature Dependent

Limit for thermal transport reduction in Si nanowires with nanoengineered corrugations

2013 ◽  
Vol 103 (24) ◽  
pp. 243107 ◽  
Author(s):  
Sean E. Sullivan ◽  
Keng-Hua Lin ◽  
Stanislav Avdoshenko ◽  
Alejandro Strachan
Keyword(s):  
Thermal Transport ◽  
Si Nanowires

scholarly journals Novel phonon resonator based on surface screw thread for suppressing thermal transport of Si nanowires

2020 ◽  
Vol 101 (20) ◽  
Author(s):  
Honggang Zhang ◽  
Bo Sun ◽  
Song Hu ◽  
Hongyan Wang ◽  
Yajuan Cheng ◽  
...  
Keyword(s):  
Thermal Transport ◽  
Screw Thread ◽  
Si Nanowires

Monte Carlo Simulation of Thermal Conductivities of Silicon Nanowires

2005 ◽  
Author(s):  
Yunfei Chen ◽  
Deyu Li ◽  
Jennifer R. Lukes ◽  
Zhonghua Ni
Keyword(s):  
Thermal Conductivity ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Dispersion Relation ◽  
Thermal Transport ◽  
Phonon Transport ◽  
Si Nanowires ◽  
Nanowire Diameter ◽  
Energy Conversion Devices ◽  
Tens Nanometer

One-dimensional (1D) materials such as various kinds of nanowires and nanotubes have attracted considerable attention due to their potential applications in electronic and energy conversion devices. The thermal transport phenomena in these nanowires and nanotubes could be significantly different from that in bulk material due to boundary scattering, phonon dispersion relation change, and quantum confinement. It is very important to understand the thermal transport phenomena in these materials so that we can apply them in the thermal design of microelectronic, photonic, and energy conversion devices. While intensive experimental efforts are being carried out to investigate the thermal transport in nanowires and nanotube, an accurate numerical prediction can help the understanding of phonon scattering mechanisms, which is of fundamental theoretical significance. A Monte Carlo simulation was developed and applied to investigate phonon transport in single crystalline Si nanowires. The Phonon-phonon Normal (N) and Umklapp (U) scattering processes were modeled with a genetic algorithm to satisfy both the energy and the momentum conservation. The scattering rates of N and U scattering processes were given from the first perturbation theory. Ballistic phonon transport was modeled with the code and the numerical results fit the theoretical prediction very well. The thermal conductivity of bulk Si was then simulated and good agreement was achieved with the experimental data. Si nanowire thermal conductivity was then studied and compared with some recent experimental results. In order to study the confinement effects on phonon transport in nanowires, two different phonon dispersions, one based on bulk Si and the other solved from the elastic wave theory for nanowires, were adopted in the simulation. The discrepancy from the simulations based on different phonon dispersions increases as the nanowire diameter decreases, which suggests that the confinement effect is significant when the nanowire diameter goes down to tens nanometer range. It was found that the U scattering probability engaged in Si nanowires was increased from that in bulk Si due to the decrease of the frequency gap between different modes and the reduced phonon group velocity. Simulation results suggest that the dispersion relation for nanowire solved from the elasticity theory should be used to evaluate nanowire thermal conductivity as the nanowire diameter reduced to tens nanometer.

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