scholarly journals Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wei-Zong Xu ◽  
Fang-Fang Ren ◽  
Jiandong Ye ◽  
Hai Lu ◽  
Lanju Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Large Area ◽  
Terahertz Metamaterials ◽  
Transparent Thin Film Transistor

Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor

2009 ◽  
Vol 54 (5(1)) ◽  
pp. 1879-1884 ◽  
Author(s):  
Woo-Seok Cheong ◽  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Chi-Sun Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Transparent Thin Film Transistor

Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

2019 ◽  
Vol 7 (46) ◽  
pp. 14543-14554 ◽  
Author(s):  
Sadia Baig ◽  
Arthur D. Hendsbee ◽  
Pankaj Kumar ◽  
Safeer Ahmed ◽  
Yuning Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Characterization Study ◽  
Transparent Thin Film Transistor

A transparent thin film transistor of yttrium-doped CuSCN has been devised with a remarkable hole mobility of 0.99 cm2 V−1 s−1.

Large Area Electronics for Flat Panel Imagers Progress and Challenges

2002 ◽  
Vol 715 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
J. Ho ◽  
Y. Wang ◽  
J. B. Boyce ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
And Performance ◽  
Flat Panel Imagers ◽  
Large Area Electronics

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

THIN-FILM TRANSISTOR MODELING

1998 ◽  
Vol 09 (03) ◽  
pp. 703-723 ◽  
Author(s):  
BENJAMIN IÑIGUEZ ◽  
TOR A. FJELDLY ◽  
MICHAEL S. SHUR
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film Transistors ◽  
Short Channel Effects ◽  
Organic Thin Film ◽  
Large Area ◽  
Short Channel ◽  
Dc Characteristics ◽  
Channel Effects ◽  
Operating Regimes

We review recent physics-based, analytical DC models for amorphous silicon (a-Si), polysilicon (poly-Si), and organic thin film transistors (TFTs), developed for the design of novel ultra high-resolution, large area displays using advanced short-channel TFTs. In particular, we emphasize the modeling issues related to the main short-channel effects, such as self-heating (a-Si TFTs) and kink effect (a-Si and poly-Si TFTs), which are present in modern TFTs. The models have been proved to accurately reproduce the DC characteristics of a-Si:H with gate lengths down to 4 μm and poly-Si TFTs with gate lengths down to 2 μm. Because the scalability of the models and the use of continuous expressions for describing the characteristics in all operating regimes, the models are suitable for implementation in circuit simulators such as SPICE.

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

2009 ◽  
Vol 1153 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Zomer Silvester Houweling ◽  
Vasco Verlaan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mass Density ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
High Mass ◽  
Hot Wire ◽  
Large Area ◽  
Active Matrix ◽  
Electrical Fields

AbstractHot Wire Chemical Vapor Deposition (HWCVD) is a fast deposition technique with high potential for homogeneous deposition of thin films on large area panels or on continuously moving substrates in an in-line manufacturing system. As there are no high-frequency electromagnetic fields, scaling up is not hampered by finite wavelength effects or the requirement to avoid inhomogeneous electrical fields. Since 1996 we have been investigating the application of the HWCVD process for thin film transistor manufacturing. It already appeared then that these Thin Film Transistors (TFTs) were electronically far more stable than those with Plasma Enhanced (PE) CVD amorphous silicon. Recently, we demonstrated that very compact SiNx layers can be deposited at high deposition rates, up to 7 nm/s. The utilization of source gases in HWCVD of a-Si3N4 films deposited at 3 nm/s is 75 % and 7 % for SiH4 and NH3, respectively. Thin films of stoichiometric a-Si3N4 deposited at this rate have a high mass-density of 3.0 g/cm3. The dielectric properties have been evaluated further in order to establish their suitability for incorporation in TFTs. Now that all TFT layers, namely, the SiNx insulator, the a-Si:H or μc Si:H layers, and the n-type doped thin film silicon can easily be manufactured by HWCVD, the prospect of “all HWCVD” TFTs for active matrix production is within reach. We tested the 3 nm/s SiNx material combined with our protocrystalline Si:H layers deposited at 1 nm/s in ‘all HW’ TFTs. Results show that the TFTs are state of the art with a field-effect mobility of 0.4 cm2/Vs. In order to assess the feasibility of large area deposition we are investigating in-line HWCVD for displays and solar cells.

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