scholarly journals High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Chien-Chung Shih ◽  
Wen-Ya Lee ◽  
Yu-Cheng Chiu ◽  
Han-Wen Hsu ◽  
Hsuan-Chun Chang ◽  
...  
Keyword(s):  
High Performance ◽  
Floating Gate ◽  
Memory Devices

High‐Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod–Coil Materials as a Floating Gate

2020 ◽  
pp. 2002638 ◽  
Author(s):  
Yun‐Chi Chiang ◽  
Chih‐Chien Hung ◽  
Yan‐Cheng Lin ◽  
Yu‐Cheng Chiu ◽  
Takuya Isono ◽  
...  
Keyword(s):  
High Performance ◽  
Floating Gate ◽  
Memory Devices

Floating-gate nanofibrous electret arrays for high performance nonvolatile organic transistor memory devices

2017 ◽  
Vol 49 ◽  
pp. 218-225 ◽  
Author(s):  
Naien Shi ◽  
Dong Liu ◽  
Xiaolei Jin ◽  
Wandan Wu ◽  
Jun Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Floating Gate ◽  
Memory Devices ◽  
Organic Transistor

High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles

Small ◽  
2015 ◽  
Vol 11 (37) ◽  
pp. 4976-4984 ◽  
Author(s):  
Ji Hyung Jung ◽  
Sunghwan Kim ◽  
Hyeonjung Kim ◽  
Jongnam Park ◽  
Joon Hak Oh
Keyword(s):  
High Performance ◽  
Cobalt Ferrite ◽  
Ferrite Nanoparticles ◽  
Floating Gate ◽  
Memory Devices ◽  
Cobalt Ferrite Nanoparticles ◽  
Floating Gate Memory

Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices

2015 ◽  
Vol 107 (9) ◽  
pp. 093102 ◽  
Author(s):  
R. Bar ◽  
R. Aluguri ◽  
S. Manna ◽  
A. Ghosh ◽  
P. V. Satyam ◽  
...  
Keyword(s):  
High Performance ◽  
Floating Gate ◽  
Memory Devices ◽  
Floating Gate Memory ◽  
Ge Nanocrystals ◽  
Al2o3 Matrix

Semiconductor Nanocrystal Floating-gate Memory Devices

2004 ◽  
Vol 830 ◽  
Author(s):  
P. Dimitrakis ◽  
P. Normand
Keyword(s):  
Low Voltage ◽  
Ion Beam ◽  
Low Energy ◽  
Floating Gate ◽  
Device Performance ◽  
Memory Devices ◽  
Research Directions ◽  
Semiconductor Nanocrystal ◽  
Floating Gate Memory ◽  
Attractive Option

ABSTRACTCurrent research directions and recent advances in the area of semiconductor nanocrystal floating-gate memory devices are herein reviewed. Particular attention is placed on the advantages, limitations and perspectives of some of the principal new alternatives suggested for improving device performance and reliability. The attractive option of generating Si nanocrystal memories by ion-beam-synthesis (IBS) is discussed with emphasis on the ultra-low-energy (ULE) regime. Pertinent issues related to the fabrication of low-voltage memory cells and the integration of the ULE-IBS technique in manufactory environment are discussed. The effect on device performance of parasitic transistors that form at the channel corner of shallow trench isolated transistors is described in details. It is shown that such parasitic transistors lead to a substantial degradation of the electrical properties of the intended devices and dominates the memory behavior of deep submicronic cells.

scholarly journals Overview of organic memory devices

2009 ◽  
Vol 367 (1905) ◽  
pp. 4141-4157 ◽  
Author(s):  
D. Prime ◽  
S. Paul
Keyword(s):  
High Performance ◽  
Storage Capacity ◽  
Memory Devices ◽  
Future Directions ◽  
Organic Memory ◽  
Industrial Implementation ◽  
Organic Memory Devices ◽  
Different Types ◽  
Charging Mechanism ◽  
Memory Structures

The demand for more efficient and faster memory structures is greater today than ever before. The efficiency of memory structures is measured in terms of storage capacity and the speed of functioning. However, the production cost of such configurations is the natural constraint on how much can be achieved. Organic memory devices (OMDs) provide an ideal solution, in being inexpensive, and at the same time promising high performance. However, all OMDs reported so far suffer from multiple drawbacks that render their industrial implementation premature. This article introduces the different types of OMDs, discusses the progress in this field over the last 9 years and invokes conundrums that scholars of this field are currently faced with, such as questions about the charging mechanism and stability of devices, contradictions in the published work and some future directions.

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