scholarly journals Theoretical assessment of feasibility to sequence DNA through interlayer electronic tunneling transport at aligned nanopores in bilayer graphene

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Jariyanee Prasongkit ◽  
Gustavo T. Feliciano ◽  
Alexandre R. Rocha ◽  
Yuhui He ◽  
Tanakorn Osotchan ◽  
...  
Keyword(s):  
Bilayer Graphene ◽  
Electronic Tunneling ◽  
Theoretical Assessment ◽  
Tunneling Transport

scholarly journals Probing 2D Magnetism through Electronic Tunneling Transport

2021 ◽  
pp. 110235
Author(s):  
Gen Long ◽  
Yutong Chen ◽  
Songge Zhang ◽  
Ning Wang ◽  
Yang Chai ◽  
...  
Keyword(s):  
Electronic Tunneling ◽  
Tunneling Transport

scholarly journals Predicting Finite-Bias Tunneling Current Properties from Zero-Bias Features: The Frontier Orbital Bias Dependence at an Exemplar Case of DNA Nucleotides in a Nanogap

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3021
Author(s):  
Ivana Djurišić ◽  
Vladimir P. Jovanović ◽  
Miloš S. Dražić ◽  
Aleksandar Ž. Tomović ◽  
Radomir Zikic
Keyword(s):  
Transport Properties ◽  
Single Molecule ◽  
Density Functional ◽  
Tunneling Current ◽  
High Sensitivity ◽  
Orbital Energy ◽  
Frontier Orbital ◽  
Zero Bias ◽  
Electronic Tunneling ◽  
Tunneling Transport

The electrical current properties of single-molecule sensing devices based on electronic (tunneling) transport strongly depend on molecule frontier orbital energy, spatial distribution, and position with respect to the electrodes. Here, we present an analysis of the bias dependence of molecule frontier orbital properties at an exemplar case of DNA nucleotides in the gap between H-terminated (3, 3) carbon nanotube (CNT) electrodes and its relation to transversal current rectification. The electronic transport properties of this simple single-molecule device, whose characteristic is the absence of covalent bonding between electrodes and a molecule between them, were obtained using density functional theory and non-equilibrium Green’s functions. As in our previous studies, we could observe two distinct bias dependences of frontier orbital energies: the so-called strong and the weak pinning regimes. We established a procedure, from zero-bias and empty-gap characteristics, to estimate finite-bias electronic tunneling transport properties, i.e., whether the molecular junction would operate in the weak or strong pinning regime. We also discuss the use of the zero-bias approximation to calculate electric current properties at finite bias. The results from this work could have an impact on the design of new single-molecule applications that use tunneling current or rectification applicable in high-sensitivity sensors, protein, or DNA sequencing.

Effectively modulating vertical tunneling transport by mechanically twisting bilayer graphene within the all-metallic architecture

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8793-8800
Author(s):  
Xian Chen ◽  
Tianmin Wu ◽  
Wei Zhuang
Keyword(s):  
Fermi Level ◽  
Bilayer Graphene ◽  
Tunneling Transport

Modulation of vertical tunneling by twisting BLG within the all-metallic architecture, which regulates the Fermi level and VHSs simultaneously.

Electric-field effects on electronic tunneling transport in magnetic barrier structures

2000 ◽  
Vol 61 (3) ◽  
pp. 1728-1731 ◽  
Author(s):  
Yong Guo ◽  
Hao Wang ◽  
Bing-Lin Gu ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Electric Field ◽  
Electric Field Effects ◽  
Magnetic Barrier ◽  
Field Effects ◽  
Electronic Tunneling ◽  
Tunneling Transport

Electronic tunneling through a potential barrier on the surface of a topological insulator

2016 ◽  
Vol 30 (35) ◽  
pp. 1650416
Author(s):  
Benliang Zhou ◽  
Benhu Zhou ◽  
Guanghui Zhou
Keyword(s):  
Potential Barrier ◽  
Topological Insulator ◽  
Electron Tunneling ◽  
Oscillation Amplitude ◽  
Transmission Probability ◽  
Incident Electron Energy ◽  
Barrier Width ◽  
Directional Filtering ◽  
Electronic Tunneling ◽  
Tunneling Transport

We investigate the tunneling transport for electrons on the surface of a topological insulator (TI) through an electrostatic potential barrier. By using the Dirac equation with the continuity conditions for all segments of wave functions at the interfaces between regions inside and outside the barrier, we calculate analytically the transmission probability and conductance for the system. It is demonstrated that, the Klein paradox can also been observed in the system same as in graphene system. Interestingly, the conductance reaches the minimum value when the incident electron energy is equal to the barrier strength. Moreover, with increasing barrier width, the conductance turns up some tunneling oscillation peaks, and larger barrier strength can cause lower conductance, shorter period but larger oscillation amplitude. The oscillation amplitude decreases as the barrier width increases, which is similar as that of the system consisting of the compressive uniaxial strain applied on a TI, but somewhat different from that of graphene system where the oscillation amplitude is a constant. The findings here imply that an electrostatic barrier can greatly influence the electron tunneling transport of the system, and may provide a new way to realize directional filtering of electrons.

A theoretical assessment of dismissal rates and unit performance, with empirical evidence.

2020 ◽  
Vol 105 (5) ◽  
pp. 527-537
Author(s):  
Mark A. Maltarich ◽  
Greg Reilly ◽  
Chris DeRose
Keyword(s):  
Empirical Evidence ◽  
Unit Performance ◽  
Theoretical Assessment
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