scholarly journals Topological, non-topological and instanton droplets driven by spin-transfer torque in materials with perpendicular magnetic anisotropy and Dzyaloshinskii–Moriya Interaction

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Mario Carpentieri ◽  
Riccardo Tomasello ◽  
Roberto Zivieri ◽  
Giovanni Finocchio
2015 ◽  
Vol 15 (10) ◽  
pp. 8336-8339 ◽  
Author(s):  
Sol Jung ◽  
Haein Yim

Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å]5 and [CoSiB 9 Å/Pd 14 Å]5 multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Doo Hyung Kang ◽  
Mincheol Shin

AbstractRecently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm. Furthermore, spin-transfer torque (STT) and spin-orbit torque (SOT) hybrid switching, which guarantees fast magnetization switching and deterministic switching, has recently been achieved in experiments. In this study, the critical switching current density of the MTJ with S-PMA through the interplay of STT and SOT was investigated using theoretical and numerical methods. As the current density inducing SOT ($$J_{\text {SOT}}$$ J SOT ) increases, the critical switching current density inducing STT ($$J_{\text {STT,c}}$$ J STT,c ) decreases. Furthermore, for a given $$J_{\text {SOT}}$$ J SOT , $$J_{\text {STT,c}}$$ J STT,c increases with increasing thickness, whereas $$J_{\text {STT,c}}$$ J STT,c decreases as the diameter increases. Moreover, $$J_{\text {STT,c}}$$ J STT,c in the plane of thickness and spin-orbit field-like torque ($$\beta$$ β ) was investigated for a fixed $$J_{\text {SOT}}$$ J SOT and diameter. Although $$J_{\text {STT,c}}$$ J STT,c decreases with increasing $$\beta$$ β , $$J_{\text {STT,c}}$$ J STT,c slowly increases with increasing thickness and increasing $$\beta$$ β . The power consumption was investigated as a function of thickness and diameter at the critical switching current density. Experimental confirmation of these results using existing experimental techniques is anticipated.


SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440023 ◽  
Author(s):  
H. SUKEGAWA ◽  
Z. C. WEN ◽  
S. KASAI ◽  
K. INOMATA ◽  
S. MITANI

Some of Co -based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co -based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co 2 FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.


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