scholarly journals Quick Fabrication of Large-area Organic Semiconductor Single Crystal Arrays with a Rapid Annealing Self-Solution-Shearing Method

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yunze Li ◽  
Deyang Ji ◽  
Jie Liu ◽  
Yifan Yao ◽  
Xiaolong Fu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductor ◽  
Large Area ◽  
Rapid Annealing ◽  
Semiconductor Single Crystal

Quantitative resonant soft x-ray reflectivity from an organic semiconductor single crystal

2019 ◽  
Vol 150 (9) ◽  
pp. 094707
Author(s):  
R. Capelli ◽  
E. Da Como ◽  
G. Kociok-Köhn ◽  
C. Fontanesi ◽  
A. Verna ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductor ◽  
X Ray ◽  
Semiconductor Single Crystal

Highly ordered alignment of conducting nano-crystallites on organic semiconductor single crystal surfaces

2015 ◽  
Vol 579 ◽  
pp. 38-43 ◽  
Author(s):  
Tomohiro Mikasa ◽  
Yukihiro Takahasｈi ◽  
Kei Hayakawa ◽  
Seiya Yokokura ◽  
Hiroyuki Hasegawa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductor ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Semiconductor Single Crystal

Prospect of organic semiconductor single crystal for spintronic applications

2021 ◽  
Author(s):  
Mingyi Ding ◽  
Xianrong Gu ◽  
Lidan Guo ◽  
Rui Zhang ◽  
Xiangwei Zhu ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Single Crystal ◽  
Single Crystals ◽  
Periodic Structure ◽  
Spin Relaxation ◽  
Organic Semiconductor ◽  
High Mobility ◽  
Material System ◽  
Pure Material ◽  
Semiconductor Single Crystal

Organic semiconductor single crystals (OSSC) possess high mobility and ultra-long spin relaxation time up to millisecond or even second level, mainly due to their pure material system, perfect periodic structure...

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

α,ω-Dihexylquaterthiophene:  A Second Thin Film Single-Crystal Organic Semiconductor

1998 ◽  
Vol 10 (2) ◽  
pp. 457-459 ◽  
Author(s):  
Howard E. Katz ◽  
Andrew J. Lovinger ◽  
Joyce G. Laquindanum
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Organic Semiconductor
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