scholarly journals Anomalous High-Energy Waterfall-Like Electronic Structure in 5 d Transition Metal Oxide Sr2IrO4 with a Strong Spin-Orbit Coupling

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yan Liu ◽  
Li Yu ◽  
Xiaowen Jia ◽  
Jianzhou Zhao ◽  
Hongming Weng ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
High Energy ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strong Spin

Atomic-scale Evidence of Local Kondo Scattering in a 4d-electron Ruthenate Ultrathin Film

2021 ◽  
Author(s):  
Chuangye Song ◽  
Tao Bo ◽  
Xin Liu ◽  
Pengjie Guo ◽  
Sheng Meng ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Surface Structure ◽  
Electron Correlation ◽  
Transition Metal Oxide ◽  
Orbit Coupling ◽  
Atomic Scale ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Reconstructed Surface

Perovskite SrRuO3 is a unique 4d transition metal oxide with coexisting spin-orbit coupling (SOC) and electron-electron correlation. However, intrinsic, non-reconstructed surface structure of SrRuO3 has not been reported so far....

Electronic structure and spin-orbit coupling in ternary transition metal chalcogenides Cu2TlX 2 (X=Se, Te)

2021 ◽  
Author(s):  
Na Qin ◽  
Xian Du ◽  
Yangyang Lv ◽  
Lu Kang ◽  
Zhongxu Yin ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Ab Initio ◽  
Band Gap ◽  
Electronic Properties ◽  
Orbit Coupling ◽  
Metal Chalcogenides ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Transition Metal Chalcogenides

Abstract Ternary transition metal chalcogenides provide a rich platform to search and study intriguing electronic properties. Using Angle-Resolved Photoemission Spectroscopy and ab initio calculation, we investigate the electronic structure of Cu2TlX 2 (X = Se, Te), ternary transition metal chalcogenides with quasi-two-dimensional crystal structure. The band dispersions near the Fermi level are mainly contributed by the Te/Se p orbitals. According to our ab-initio calculation, the electronic structure changes from a semiconductor with indirect band gap in Cu2TlSe2 to a semimetal in Cu2TlTe2, suggesting a band-gap tunability with the composition of Se and Te. By comparing ARPES experimental data with the calculated results, we identify strong modulation of the band structure by spin-orbit coupling in the compounds. Our results provide a ternary platform to study and engineer the electronic properties of transition metal chalcogenides related to large spin-orbit coupling.

scholarly journals Electric field manipulation enhanced by strong spin-orbit coupling: promoting rare-earth ions as qubits

2020 ◽  
Vol 7 (10) ◽  
pp. 1557-1563 ◽  
Author(s):  
Zheng Liu ◽  
Ye-Xin Wang ◽  
Yu-Hui Fang ◽  
Si-Xue Qin ◽  
Zhe-Ming Wang ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electric Field ◽  
High Efficiency ◽  
High Energy ◽  
Rare Earth Ions ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Field Manipulation ◽  
Strong Spin

Abstract Quantum information processing based on magnetic ions has potential for applications as the ions can be modified in their electronic properties and assembled by a variety of chemical methods. For these systems to achieve individual spin addressability and high energy efficiency, we exploited the electric field as a tool to manipulate the quantum behaviours of the rare-earth ion which has strong spin-orbit coupling. A Ce:YAG single crystal was employed with considerations to the dynamics and the symmetry requirements. The Stark effect of the Ce3+ ion was observed and measured. When demonstrated as a quantum phase gate, the electric field manipulation exhibited high efficiency which allowed up to 57 π/2 operations before decoherence with optimized field direction. It was also utilized to carry out quantum bang-bang control, as a method of dynamic decoupling, and the refined Deutsch-Jozsa algorithm. Our experiments highlighted rare-earth ions as potentially applicable qubits because they offer enhanced spin-electric coupling which enables high-efficiency quantum manipulation.

scholarly journals Observation of chiral surface excitons in a topological insulator Bi2Se3

2019 ◽  
Vol 116 (10) ◽  
pp. 4006-4011 ◽  
Author(s):  
H.-H. Kung ◽  
A. P. Goyal ◽  
D. L. Maslov ◽  
X. Wang ◽  
A. Lee ◽  
...  
Keyword(s):  
Polarized Light ◽  
Orbit Coupling ◽  
Experimental Investigations ◽  
Composite Particles ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Excitation Energies ◽  
Circularly Polarized Light ◽  
Pl Emission ◽  
Strong Spin

The protected electron states at the boundaries or on the surfaces of topological insulators (TIs) have been the subject of intense theoretical and experimental investigations. Such states are enforced by very strong spin–orbit interaction in solids composed of heavy elements. Here, we study the composite particles—chiral excitons—formed by the Coulomb attraction between electrons and holes residing on the surface of an archetypical 3D TI,Bi2Se3. Photoluminescence (PL) emission arising due to recombination of excitons in conventional semiconductors is usually unpolarized because of scattering by phonons and other degrees of freedom during exciton thermalization. On the contrary, we observe almost perfectly polarization-preserving PL emission from chiral excitons. We demonstrate that the chiral excitons can be optically oriented with circularly polarized light in a broad range of excitation energies, even when the latter deviate from the (apparent) optical band gap by hundreds of millielectronvolts, and that the orientation remains preserved even at room temperature. Based on the dependences of the PL spectra on the energy and polarization of incident photons, we propose that chiral excitons are made from massive holes and massless (Dirac) electrons, both with chiral spin textures enforced by strong spin–orbit coupling. A theoretical model based on this proposal describes quantitatively the experimental observations. The optical orientation of composite particles, the chiral excitons, emerges as a general result of strong spin–orbit coupling in a 2D electron system. Our findings can potentially expand applications of TIs in photonics and optoelectronics.

Sign in / Sign up

Export Citation Format

Share Document