scholarly journals Variable-angle high-angle annular dark-field imaging: application to three-dimensional dopant atom profiling

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Jack Y. Zhang ◽  
Jinwoo Hwang ◽  
Brandon J. Isaac ◽  
Susanne Stemmer
Keyword(s):  
Three Dimensional ◽  
Dark Field ◽  
Dopant Atom ◽  
High Angle ◽  
Dark Field Imaging ◽  
Variable Angle ◽  
Imaging Application ◽  
Annular Dark Field ◽  
Field Imaging

Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging

2016 ◽  
Vol 169 ◽  
pp. 1-10 ◽  
Author(s):  
Andreas Beyer ◽  
Jürgen Belz ◽  
Nikolai Knaub ◽  
Kakhaber Jandieri ◽  
Kerstin Volz
Keyword(s):  
Dark Field ◽  
Atomic Resolution ◽  
High Angle ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Field Imaging

Atomic-Scale Investigation of Two-Component MoVO Complex Oxide Catalysts Using Aberration-Corrected High-Angle Annular Dark-Field Imaging

2010 ◽  
Vol 22 (6) ◽  
pp. 2033-2040 ◽  
Author(s):  
William D. Pyrz ◽  
Douglas A. Blom ◽  
Masahiro Sadakane ◽  
Katsunori Kodato ◽  
Wataru Ueda ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Dark Field ◽  
Oxide Catalysts ◽  
Atomic Scale ◽  
High Angle ◽  
Dark Field Imaging ◽  
Two Component ◽  
Annular Dark Field ◽  
Field Imaging ◽  
Aberration Corrected

Atomic-Scale Imaging of Dopant Atom Distributions Within Silicon δ-Doped Layers

1999 ◽  
Vol 589 ◽  
Author(s):  
R. Vanfleet ◽  
D.A. Muller ◽  
H.J. Gossmann ◽  
P.H. Citrin ◽  
J. Silcox
Keyword(s):  
Dark Field ◽  
Atomic Scale ◽  
Dopant Atom ◽  
Specimen Preparation ◽  
Dark Field Imaging ◽  
Dramatic Difference ◽  
Annular Dark Field ◽  
Dopant Atoms ◽  
Electron Energy Loss ◽  
Field Imaging

AbstractWe report measurements of the distribution of Sb atoms in σ-doped Si, over a wide 2-D concentration range. Both annular dark-field imaging and electron energy loss spectroscopy proved sufficiently sensitive to locate Sb atoms at the atomic scale. Improvements in both detector sensitivities and specimen preparation were necessary to achieve these results, which offer a surprising explanation for the dramatic difference in electrical activity between 2-D and 3-D dopant distributions at the same effective volume concentrations. The prospects for the general identification of individual dopant atoms will be discussed.

High-angle annular dark-field imaging of self-assembled Ge islands on Si(001)

2001 ◽  
Vol 87 (1-2) ◽  
pp. 79-88 ◽  
Author(s):  
Chuan-Pu Liu ◽  
R.D. Twesten ◽  
J.Murray Gibson
Keyword(s):  
Dark Field ◽  
High Angle ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Self Assembled ◽  
Field Imaging
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