scholarly journals Gate-tuned quantum oscillations of topological surface states in β-Ag2Te

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Azat Sulaev ◽  
Weiguang Zhu ◽  
Kie Leong Teo ◽  
Lan Wang
Keyword(s):  
Surface States ◽  
Quantum Oscillations ◽  
Topological Surface

scholarly journals Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3−ySey

2016 ◽  
Vol 227 ◽  
pp. 13-18 ◽  
Author(s):  
Y. Pan ◽  
A.M. Nikitin ◽  
D. Wu ◽  
Y.K. Huang ◽  
A. Puri ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Surface States ◽  
Quantum Oscillations ◽  
Topological Surface

scholarly journals Electron–hole asymmetry of the topological surface states in strained HgTe

2017 ◽  
Vol 114 (13) ◽  
pp. 3381-3386 ◽  
Author(s):  
Andreas Jost ◽  
Michel Bendias ◽  
Jan Böttcher ◽  
Ewelina Hankiewicz ◽  
Christoph Brüne ◽  
...  
Keyword(s):  
Topological Insulators ◽  
Quantum Hall ◽  
Surface States ◽  
Metallic Surface ◽  
Electron Hole ◽  
Linear Dispersion ◽  
Strong Electron ◽  
Quantum Oscillations ◽  
Strong Deviation ◽  
Topological Surface

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron–hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected.

scholarly journals Zeeman effect of the topological surface states revealed by quantum oscillations up to 91 Tesla

2015 ◽  
Vol 92 (23) ◽  
Author(s):  
Zuocheng Zhang ◽  
Wei Wei ◽  
Fangyuan Yang ◽  
Zengwei Zhu ◽  
Minghua Guo ◽  
...  
Keyword(s):  
Zeeman Effect ◽  
Surface States ◽  
Quantum Oscillations ◽  
Topological Surface

Large Damping Enhancement in Dirac‐Semimetal–Ferromagnetic‐Metal Layered Structures Caused by Topological Surface States

2021 ◽  
pp. 2008411
Author(s):  
Jinjun Ding ◽  
Chuanpu Liu ◽  
Yuejie Zhang ◽  
Vijaysankar Kalappattil ◽  
Rui Yu ◽  
...  
Keyword(s):  
Surface States ◽  
Layered Structures ◽  
Ferromagnetic Metal ◽  
Dirac Semimetal ◽  
Topological Surface

scholarly journals Discovery of a weak topological insulating state and van Hove singularity in triclinic RhBi2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kyungchan Lee ◽  
Gunnar F. Lange ◽  
Lin-Lin Wang ◽  
Brinda Kuthanazhi ◽  
Thaís V. Trevisan ◽  
...  
Keyword(s):  
Time Reversal ◽  
Topological Insulators ◽  
Dirac Point ◽  
Saddle Points ◽  
Surface States ◽  
Van Hove Singularity ◽  
Space Group ◽  
Topological Materials ◽  
Topological Surface ◽  
Optimal Space

AbstractTime reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi2 that belongs to the optimal space group P$$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy (EF). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.

Fermi level tuning and the robustness of topological surface states against impurity doping in Sn doped Sb2Te2Se

2021 ◽  
Vol 118 (15) ◽  
pp. 154001
Author(s):  
Debarghya Mallick ◽  
Shoubhik Mandal ◽  
R. Ganesan ◽  
P. S. Anil Kumar
Keyword(s):  
Fermi Level ◽  
Surface States ◽  
Impurity Doping ◽  
Topological Surface

scholarly journals 2D weak anti-localization in thin films of the topological semimetal Pd$$_{3}$$Bi$$_{2}$$S$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh
Keyword(s):  
Thin Films ◽  
Phonon Scattering ◽  
Surface States ◽  
Relaxation Mechanism ◽  
Transport Studies ◽  
Bulk Carriers ◽  
Topological Semimetal ◽  
Topological Surface ◽  
First Time ◽  
Electron Phonon Scattering

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

Magnetic Quantum Oscillations from Surface States of Bi Nanowires

2011 ◽  
Vol 1350 ◽  
Author(s):  
L. A. Konopko ◽  
T. E. Huber ◽  
A. A. Nikolaeva
Keyword(s):  
Single Crystal ◽  
Low Temperatures ◽  
Surface States ◽  
Charge Carriers ◽  
Quantum Oscillations ◽  
Wide Range ◽  
Spin Orbit Interactions ◽  
Conducting Tube ◽  
Magnetic Quantum Oscillations ◽  
Strong Spin

ABSTRACTIn this work, we report the results of studies of the transverse magnetoresistance (MR) of single-crystal Bi nanowires with diameter d<80 nm. The single-crystal nanowire samples were prepared by the Taylor-Ulitovsky technique. Due to the semimetal-to-semiconductor transformation and high density of surface states with strong spin-orbit interactions, the charge carriers are confined to the conducting tube made of surface states. The non monotonic changes of transverse MR that are equidistant in a direct magnetic field were observed at low temperatures in a wide range of magnetic fields up to 14 T. The period of oscillations depends on the wire diameter d as for the case of longitudinal MR. An interpretation of transverse MR oscillations is presented.

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