scholarly journals Massive Interfacial Reconstruction at Misfit Dislocations in Metal/Oxide Interfaces

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Samrat Choudhury ◽  
Dane Morgan ◽  
Blas Pedro Uberuaga
1991 ◽  
Vol 238 ◽  
Author(s):  
W. Mader

ABSTRACTRecent work is reviewed on the structure of metal/metal oxide interfaces in model systems with well defined orientation relationships and boundary inclination. Structural relaxations established upon interface formation may be described as misfit dislocations which can be investigated using conventional and high resolution TEM. The conditions for obtaining informations at an atomistic scale using HRTEM are critically discussed. Specifically, geometrical restrictions are found to be critical in HRTEM study of {111} interfaces in fee metal -fee oxide systems. Different misfit dislocation networks at {100} interfaces in fee metal - fee oxide systems were observed which may be correlated to the relative strength of metal-anion and metal-cation bonds at the interface. In strongly interacting systems misfit dislocations can possess an equilibrium stand-off distance from the interface. In the system Nb-Al2O3 the interface is shown to be coherent by the registry of atomic columns adjacent to the interface. In this configuration energy is minimized by unbroken strong interfacial bonds and misfit localization in the elastically softer metal.


1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-781-C1-787
Author(s):  
B. BONVALOT ◽  
G. DHALENNE ◽  
F. MILLOT ◽  
A. REVCOLEVSCHI

1995 ◽  
Vol 02 (01) ◽  
pp. 109-126 ◽  
Author(s):  
ROBERT J. LAD

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO (100), TiO 2(110), and [Formula: see text] surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.


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