scholarly journals Engineering Topological Surface States and Giant Rashba Spin Splitting in BiTeI/Bi2Te3 Heterostructures

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Jin-Jian Zhou ◽  
Wanxiang Feng ◽  
Ying Zhang ◽  
Shengyuan A. Yang ◽  
Yugui Yao
Keyword(s):  
Surface States ◽  
Spin Splitting ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Topological Surface

scholarly journals Rashba spin splitting of L -gap surface states on Ag(111) and Cu(111)

2018 ◽  
Vol 98 (4) ◽  
Author(s):  
Koichiro Yaji ◽  
Ayumi Harasawa ◽  
Kenta Kuroda ◽  
Ronghan Li ◽  
Binghai Yan ◽  
...  
Keyword(s):  
Surface States ◽  
Spin Splitting ◽  
Rashba Spin ◽  
Rashba Spin Splitting

Controlling Rashba spin splitting in Au(111) surface states through electric field

2013 ◽  
Vol 87 (3) ◽  
Author(s):  
Shi-Jing Gong ◽  
Chun-Gang Duan ◽  
Yan Zhu ◽  
Zi-Qiang Zhu ◽  
Jun-Hao Chu
Keyword(s):  
Electric Field ◽  
Surface States ◽  
Spin Splitting ◽  
Rashba Spin ◽  
Rashba Spin Splitting

scholarly journals Chemical control of the Rashba spin splitting size of α -GeTe(111) surface states by adjusting the potential at the topmost atomic layer

2021 ◽  
Vol 103 (24) ◽  
Author(s):  
Hanyoung Ryu ◽  
Jae-Mo Lihm ◽  
Joonil Cha ◽  
Beomyoung Kim ◽  
Beom Seo Kim ◽  
...  
Keyword(s):  
Chemical Control ◽  
Surface States ◽  
Atomic Layer ◽  
Spin Splitting ◽  
Rashba Spin ◽  
Rashba Spin Splitting

scholarly journals Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yan Li ◽  
Yang Li ◽  
Peng Li ◽  
Bin Fang ◽  
Xu Yang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Room Temperature ◽  
Theoretical Calculations ◽  
Ferromagnetic Layer ◽  
Spin Splitting ◽  
New Paradigm ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Fundamental Insight ◽  
Insight Into

AbstractNonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.

First-principles prediction of inversion-asymmetric topological insulator in hexagonal BiPbH monolayer

2016 ◽  
Vol 4 (37) ◽  
pp. 8750-8757 ◽  
Author(s):  
Yi-zhen Jia ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Ping Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Topological Insulator ◽  
First Principles ◽  
Condensed Matter ◽  
Spin Splitting ◽  
Condensed Matter Physics ◽  
Rashba Spin ◽  
Rashba Spin Splitting

Band topology and Rashba spin splitting (RSS) are two extensively explored yet exotic properties in condensed matter physics.

scholarly journals Strain-enhanced giant Rashba spin splitting in ultrathin KTaO3 films for spin-polarized photocurrents

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44088-44095
Author(s):  
Ning Wu ◽  
Xue-Jing Zhang ◽  
Bang-Gui Liu
Keyword(s):  
First Principles ◽  
Biaxial Stress ◽  
Spin Splitting ◽  
Semiconductor Surfaces ◽  
Surfaces And Interfaces ◽  
Rashba Spin ◽  
Spin Polarized ◽  
Rashba Spin Splitting

Strong Rashba effects at semiconductor surfaces and interfaces have attracted attention for exploration and applications. We show with first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO3 (KTO) (001) films.

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