scholarly journals Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Filippo Fabbri ◽  
Enzo Rotunno ◽  
Laura Lazzarini ◽  
Naoki Fukata ◽  
Giancarlo Salviati
Keyword(s):  
Silicon Nanowires ◽  
Light Emission ◽  
Red Light ◽  
Boron Doped ◽  
Infra Red

scholarly journals Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires

2010 ◽  
Vol 16 (S2) ◽  
pp. 824-825
Author(s):  
F Fabbri ◽  
L Lazzarini ◽  
G Salviati ◽  
N Fukata
Keyword(s):  
Silicon Nanowires ◽  
Room Temperature ◽  
Light Emission ◽  
Red Light ◽  
Boron Doped ◽  
Infra Red ◽  
Doped Silicon

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

scholarly journals The Effect of Polarized Light Irradiation by Near Infra-red Light Emission Diodes (LED) on Acceleration of Wound Healing

1989 ◽  
Vol 10 (3) ◽  
pp. 407-410
Author(s):  
H. Ito ◽  
Y. Kurokawa ◽  
Y. Taguchi ◽  
S. Sato ◽  
H. Inaba
Keyword(s):  
Wound Healing ◽  
Light Emission ◽  
Red Light ◽  
Polarized Light ◽  
Light Irradiation ◽  
Infra Red

scholarly journals Incommensurately Modulated Crystal Structure and Photoluminescence Properties of Eu2O3- and P2O5-Doped Ca2SiO4 Phosphor

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 58
Author(s):  
Hiromi Nakano ◽  
Shota Ando ◽  
Konatsu Kamimoto ◽  
Yuya Hiramatsu ◽  
Yuichi Michiue ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Light Emission ◽  
Red Light ◽  
Basic Unit ◽  
Β Phase ◽  
Stacking Order ◽  
Cell Dimensions ◽  
Incommensurate Modulation ◽  
Unit Cell Dimensions ◽  
Identical Chemical Composition

We prepared four types of Eu2O3- and P2O5-doped Ca2SiO4 phosphors with different phase compositions but identical chemical composition, the chemical formula of which was (Ca1.950Eu3+0.013☐0.037)(Si0.940P0.060)O4 (☐ denotes vacancies in Ca sites). One of the phosphors was composed exclusively of the incommensurate (IC) phase with superspace group Pnma(0β0)00s and basic unit-cell dimensions of a = 0.68004(2) nm, b = 0.54481(2) nm, and c = 0.93956(3) nm (Z = 4). The crystal structure was made up of four types of β-Ca2SiO4-related layers with an interlayer. The incommensurate modulation with wavelength of 4.110 × b was induced by the long-range stacking order of these layers. When increasing the relative amount of the IC-phase with respect to the coexisting β-phase, the red light emission intensity, under excitation at 394 nm, steadily decreased to reach the minimum, at which the specimen was composed exclusively of the IC-phase. The coordination environments of Eu3+ ion in the crystal structures of β- and IC-phases might be closely related to the photoluminescence intensities of the phosphors.

Gold nanoshells-mediated bimodal photodynamic and photothermal cancer treatment using ultra-low doses of near infra-red light

Biomaterials ◽  
2014 ◽  
Vol 35 (21) ◽  
pp. 5527-5538 ◽  
Author(s):  
Raviraj Vankayala ◽  
Chun-Chih Lin ◽  
Poliraju Kalluru ◽  
Chi-Shiun Chiang ◽  
Kuo Chu Hwang
Keyword(s):  
Cancer Treatment ◽  
Red Light ◽  
Gold Nanoshells ◽  
Low Doses ◽  
Infra Red

scholarly journals Cooling atomic ions with visible and infra-red light

2017 ◽  
Vol 19 (6) ◽  
pp. 063041 ◽  
Author(s):  
F Lindenfelser ◽  
M Marinelli ◽  
V Negnevitsky ◽  
S Ragg ◽  
J P Home
Keyword(s):  
Red Light ◽  
Atomic Ions ◽  
Infra Red

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

Charge Transport Characteristics in Boron-Doped Silicon Nanowires

2008 ◽  
Vol 55 (11) ◽  
pp. 2931-2938 ◽  
Author(s):  
Sarang Ingole ◽  
Pradeep Manandhar ◽  
Satishkumar B. Chikkannanavar ◽  
Elshan A. Akhadov ◽  
S. Tom Picraux
Keyword(s):  
Charge Transport ◽  
Silicon Nanowires ◽  
Boron Doped ◽  
Doped Silicon

First-principles identification of VI+Cui defect cluster in cuprous iodide: origin of red light photoluminescence

2022 ◽  
Author(s):  
Dingrong Liu ◽  
Zenghua Cai ◽  
Yu-Ning Wu ◽  
Shiyou Chen
Keyword(s):  
First Principles ◽  
Light Emission ◽  
Red Light ◽  
Defect Cluster ◽  
Intrinsic Point Defect ◽  
Long Wavelength ◽  
Type Semiconductor ◽  
Display Technology ◽  
Wavelength Emission ◽  
P Type

Abstract The γ-phase Cuprous Iodide (CuI) emerges as a promising transparent p-type semiconductor for next-generation display technology because of its wide direct band gap, intrinsic p-type conductivity, and high carrier mobility. Two main peaks are observed in its photoluminescence (PL). One is short wavelength (410-430 nm) emission, which is well attributed to the electronic transitions at Cu vacancy, whereas the other long wavelength emission (680-720 nm) has not been fully understood. In this paper, through first-principles simulations, we investigate the formation energies and emission line shape for various defects, and discover that the intrinsic point defect cluster V_I+Cu_i^(2+) is the source of the long wavelength emission. Our finding is further supported by the prediction that the defect concentration decreases dramatically as the chemical condition changes from Cu-rich to I-rich, explaining the significant reduction in the red light emission if CuI is annealed in abundant I environment.

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