scholarly journals Tailoring Dispersion for Broadband Low-loss Optical Metamaterials Using Deep-subwavelength Inclusions

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Zhi Hao Jiang ◽  
Seokho Yun ◽  
Lan Lin ◽  
Jeremy A. Bossard ◽  
Douglas H. Werner ◽  
...  
Keyword(s):  
Low Loss ◽  
Optical Metamaterials

Low-Loss Impedance-Matched Optical Metamaterials with Zero-Phase Delay

ACS Nano ◽  
2012 ◽  
Vol 6 (5) ◽  
pp. 4475-4482 ◽  
Author(s):  
Seokho Yun ◽  
Zhi Hao Jiang ◽  
Qian Xu ◽  
Zhiwen Liu ◽  
Douglas H. Werner ◽  
...  
Keyword(s):  
Phase Delay ◽  
Low Loss ◽  
Optical Metamaterials ◽  
Zero Phase

scholarly journals Laser Writing of Multiscale Chiral Polymer Metamaterials

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
E. P. Furlani ◽  
H. S. Jee ◽  
H. S. Oh ◽  
A. Baev ◽  
P. N. Prasad
Keyword(s):  
Molecular Level ◽  
Pulsed Laser ◽  
Incident Field ◽  
Polymer Mixture ◽  
Two Dimensional ◽  
Low Loss ◽  
New Approach ◽  
Optical Metamaterials ◽  
Two Photon ◽  
Chiral Polymer

A new approach to metamaterials is presented that involves laser-based patterning of novel chiral polymer media, wherein chirality is realized at two distinct length scales, intrinsically at the molecular level and geometrically at a length scale on the order of the wavelength of the incident field. In this approach, femtosecond-pulsed laser-induced two-photon lithography (TPL) is used to pattern a photoresist-chiral polymer mixture into planar chiral shapes. Enhanced bulk chirality can be realized by tuning the wavelength-dependent chiral response at both the molecular and geometric level to ensure an overlap of their respective spectra. The approach is demonstrated via the fabrication of a metamaterial consisting of a two-dimensional array of chiral polymer-based L-structures. The fabrication process is described and modeling is performed to demonstrate the distinction between molecular and planar geometric-based chirality and the effects of the enhanced multiscale chirality on the optical response of such media. This new approach to metamaterials holds promise for the development of tunable, polymer-based optical metamaterials with low loss.

Low-Loss Images in a Stem/Tem Microscope

1976 ◽  
Vol 34 ◽  
pp. 496-497 ◽  
Author(s):  
David C. Joy ◽  
Dennis M. Maher
Keyword(s):  
High Resolution ◽  
Surface Topography ◽  
Beam Direction ◽  
Low Loss ◽  
Specimen Holder ◽  
Glancing Angle ◽  
High Resolution Images ◽  
Set Up ◽  
Conventional Manner ◽  
Objective Type

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

Background Fitting in the Low-Loss Region of Electron Energy Loss Spectra

1990 ◽  
Vol 48 (2) ◽  
pp. 56-57
Author(s):  
C P Scott ◽  
A J Craven ◽  
C J Gilmore ◽  
A W Bowen
Keyword(s):  
Energy Loss ◽  
Multiple Scattering ◽  
Simple Form ◽  
Single Scattering ◽  
Low Loss ◽  
Characteristic Energy ◽  
Normal Method ◽  
Fitting In ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

The normal method of background subtraction in quantitative EELS analysis involves fitting an expression of the form I=AE-r to an energy window preceding the edge of interest; E is energy loss, A and r are fitting parameters. The calculated fit is then extrapolated under the edge, allowing the required signal to be extracted. In the case where the characteristic energy loss is small (E < 100eV), the background does not approximate to this simple form. One cause of this is multiple scattering. Even if the effects of multiple scattering are removed by deconvolution, it is not clear that the background from the recovered single scattering distribution follows this simple form, and, in any case, deconvolution can introduce artefacts.The above difficulties are particularly severe in the case of Al-Li alloys, where the Li K edge at ~52eV overlaps the Al L2,3 edge at ~72eV, and sharp plasmon peaks occur at intervals of ~15eV in the low loss region. An alternative background fitting technique, based on the work of Zanchi et al, has been tested on spectra taken from pure Al films, with a view to extending the analysis to Al-Li alloys.

STEM Study of Surface Plasmon Excitation in Small Spherical Particles

1990 ◽  
Vol 48 (2) ◽  
pp. 42-43
Author(s):  
Daniel UGARTE
Keyword(s):  
Energy Loss ◽  
Spherical Particles ◽  
Small Particles ◽  
Bulk Materials ◽  
Low Loss ◽  
Plasmon Excitation ◽  
Surface Modes ◽  
Surface Plasmon Excitation ◽  
Analytical Electron ◽  
Analytical Electron Microscope

Small particles exhibit chemical and physical behaviors substantially different from bulk materials. This is due to the fact that boundary conditions can induce specific constraints on the observed properties. As an example, energy loss experiments carried out in an analytical electron microscope, constitute a powerful technique to investigate the excitation of collective surface modes (plasmons), which are modified in a limited size medium. In this work a STEM VG HB501 has been used to study the low energy loss spectrum (1-40 eV) of silicon spherical particles [1], and the spatial localization of the different modes has been analyzed through digitally acquired energy filtered images. This material and its oxides have been extensively studied and are very well characterized, because of their applications in microelectronics. These particles are thus ideal objects to test the validity of theories developed up to now.Typical EELS spectra in the low loss region are shown in fig. 2 and energy filtered images for the main spectral features in fig. 3.

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