scholarly journals Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Na Gao ◽  
Kai Huang ◽  
Jinchai Li ◽  
Shuping Li ◽  
Xu Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Deep Uv

Localized Surface Plasmon-Enhanced Deep-UV Light-Emitting Diodes with Al/Al2O3 Asymmetrical Nanoparticles

Plasmonics ◽  
2016 ◽  
Vol 12 (3) ◽  
pp. 843-848 ◽  
Author(s):  
Jin Wang ◽  
Guofeng Yang ◽  
Qing Zhang ◽  
Shumei Gao ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Localized Surface Plasmon ◽  
Light Emitting ◽  
Deep Uv

Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density

2021 ◽  
Vol 118 (23) ◽  
pp. 231102
Author(s):  
Youn Joon Sung ◽  
Dong-Woo Kim ◽  
Geun Young Yeom ◽  
Kyu Sang Kim
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Density ◽  
Light Emitting ◽  
Deep Uv

Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates

2007 ◽  
Vol 46 (No. 23) ◽  
pp. L537-L539 ◽  
Author(s):  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Surendra Srivastava ◽  
Thomas Katona ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Organic Hydride ◽  
Metal Organic ◽  
Deep Uv

Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

2008 ◽  
Vol 205 (5) ◽  
pp. 1070-1073 ◽  
Author(s):  
E. Dimakis ◽  
A. Yu. Nikiforov ◽  
C. Thomidis ◽  
L. Zhou ◽  
D. J. Smith ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

Matrix Addressable Micro-Pixel 280 nm Deep UV Light-Emitting Diodes

2006 ◽  
Vol 45 (No. 12) ◽  
pp. L352-L354 ◽  
Author(s):  
Shuai Wu ◽  
Sameer Chhajed ◽  
Li Yan ◽  
Wenhong Sun ◽  
Maxim Shatalov ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Deep Uv
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