scholarly journals Equilibrium melting temperature and crystallization kinetics of α- and β′-PBN crystal forms

2011 ◽  
Vol 44 (2) ◽  
pp. 174-180 ◽  
Author(s):  
Michelina Soccio ◽  
Nadia Lotti ◽  
Lara Finelli ◽  
Andrea Munari
1976 ◽  
Vol 49 (1) ◽  
pp. 170-178 ◽  
Author(s):  
G. Gianotti ◽  
A. Capizzi ◽  
L. Del Giudice

Abstract The thermodynamic parameters of fusion and crystallization kinetics of cis-polyoctenamer were investigated. We adopted the cryoscopic method based on the melting point decrease in the presence of diluents, using toluene as a diluent. It was also possible to determine the equilibrium melting temperature by extrapolating the “kinetic” melting points, measured on polymers crystallized at various temperatures. The dependence of ΔHu and Teq on the cis content allows evaluation of their values for all-cis-polyoctenamer. Conclusions about the elastomeric properties of the polymer are drawn.


1964 ◽  
Vol 37 (2) ◽  
pp. 404-407 ◽  
Author(s):  
M. F. Bukhina

Abstract 1. The dependence of the polymer crystallization rates on temperature is considered on the basis of the general theory of crystallization kinetics for supercooled liquids. The coefficients in the equations relating the crystallization half time, τ½, to the degree of supercooling are calculated for natural rubber. 2. An approximate expression is obtained which relates the equilibrium melting temperature of deformed rubber with the mechanical stress applied when crystallization starts. 3. The acceleration of crystallization which is induced by deformation is shown to be basically associated with an increase of the equilibrium melting temperature. 4. The possibility of calculating the crystallization rate at all temperatures and stresses from the results of a small number of experiments is established.


2020 ◽  
Author(s):  
Liyuan Wang ◽  
Jiaxi Liu ◽  
Nan Lu ◽  
Zengchao Yang ◽  
Gang He ◽  
...  

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.


Author(s):  
Pratim Kumar Patra ◽  
Aanchal Jaisingh ◽  
Vishal Goel ◽  
Gurpreet Singh Kapur ◽  
Leena Nebhani

2021 ◽  
Vol 154 (14) ◽  
pp. 144703
Author(s):  
R. Scott Smith ◽  
M. Tylinski ◽  
Greg A. Kimmel ◽  
Bruce D. Kay

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