Ionic Double-layer Adsorption on Immersed Electrets by Laser Interferometry

1973 ◽  
Vol 243 (129) ◽  
pp. 117-119
Author(s):  
R. N. O'BRIEN ◽  
K. J. LUSHINGTON
2009 ◽  
Vol 54 (14) ◽  
pp. 3766-3774 ◽  
Author(s):  
Terry C. Chilcott ◽  
Elicia L.S. Wong ◽  
Hans G.L. Coster ◽  
Adelle C.F. Coster ◽  
Michael James

In this paper a theoretical analysis is made of the electrokinetic phenomenon known as the ‘electroviscous effect’. A general formula is given for the effective viscosity of a suspension of solid, spherical, charged non-conducting particles in an electrolyte. The increase of the effective viscosity due to the surface charge and the ionic double layer surrounding the particles is determined by a modification of Einstein’s method for the calculation of the viscosity of solid suspensions. The effective viscosity may be expressed in the form η = η 0 {1+2.5 (v/V) (1+Ʃ ∞ r -1 a r Q r )}, where η 0 is the viscosity of the electrolyte, v the volume of suspension in volume V of solution and Qe is the charge on each particle. It is shown that a 1 = 0 and a 2 is determined explicitly. It is found that the electroviscous contribution to η, for a given charge Q , tends to increase as the thickness of the double layer increases. When the thickness of the double layer is small compared with the radius of the particle the effect vanishes. A comparison with previous theoretical work is made, and it is shown that much improved agreement with experiment is obtained.


TANSO ◽  
2021 ◽  
Vol 2021 (297) ◽  
pp. 65-69
Author(s):  
Zairan Cheng ◽  
Naoya Nakajima ◽  
Masato Nonomura ◽  
Hirokazu Oda ◽  
Kiyoharu Nakagawa

2004 ◽  
Vol 99-100 ◽  
pp. 243-246 ◽  
Author(s):  
S. Lindroos ◽  
J. Puišo ◽  
Sigitas Tamulevičius ◽  
Markku Leskelä

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.


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