scholarly journals In situ doping control of the surface of high-temperature superconductors

2008 ◽  
Vol 4 (7) ◽  
pp. 527-531 ◽  
Author(s):  
M. A. Hossain ◽  
J. D. F. Mottershead ◽  
D. Fournier ◽  
A. Bostwick ◽  
J. L. McChesney ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Doping Control

A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
M. Touzeau ◽  
A. Schuhl ◽  
R. Cabanel ◽  
P. Luzeau ◽  
A. Barski ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
High Temperature Superconductors ◽  
Plasma Source ◽  
Plasma Discharge

AbstractWe describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.

scholarly journals A study by In Situ FTIR Spectroscopy of the Decomposition of Precursors for the MOCVD of High Temperature Superconductors

1995 ◽  
Vol 05 (C5) ◽  
pp. C5-357-C5-364 ◽  
Author(s):  
A. Y. Kovalgin ◽  
F. Chabert-Rocabois ◽  
M. L. Hitchman ◽  
S. H. Shamlian ◽  
S. E. Alexandrov
Keyword(s):  
High Temperature ◽  
Ftir Spectroscopy ◽  
High Temperature Superconductors ◽  
In Situ Ftir ◽  
In Situ Ftir Spectroscopy

Ion Beam Modification of TI-Ba-Ca-Cu-O Type High Temperature Superconductors During Irradiation

1994 ◽  
Vol 373 ◽  
Author(s):  
P.P. Newcomer ◽  
L. M. Wang ◽  
B. Morosin
Keyword(s):  
High Temperature ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Ion Beam Modification ◽  
Moiré Fringes ◽  
High Resolution Tem ◽  
20 Nm ◽  
Induced Crystallization

AbstractMicrostructural modification of high temperature superconductor (HTS) single-crystal plates of T1-1212 and T1-2212 (numbers designate the Tl/Ba/Ca/Cu cation ratio) was studied during 1.5 MeV Kr+ and Xe+ ion irradiation with in-situ electron diffraction and after ion irradiation with high resolution TEM (HRTEM). Similar in-situ temperature dependence effects are seen for both phases. During irradiations from 22K to 673K, an amorphous halo develops after very low ion dose or fluence (l.7X1012 ions/cm2). During irradiation at 100K and 300K, complete amorphization is obtained, while at 22K and ≥533K, the halo fades slightly and a polycrystalline ring pattern develops, indicating ion irradiation induced crystallization occurred. After a low ion dose (8.5XlO12ions/cm2) at 100K and 300K, HRTEM reveals amorphous regions 5 -20 nm in size which are not columnar and do not all penetrate the entire sample thickness. At 22K and ≥533K, Moire fringes and misoriented crystallites of cascade size are observed. The 4 - 6nm crystallites are thallium-rich.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

A study by GC-MS of the decomposition of precursors for the MOCVD of high temperature superconductors

2002 ◽  
Vol 12 (4) ◽  
pp. 85-92
Author(s):  
O. V. Lopaeva ◽  
M. L. Hitchman ◽  
S. H. Shamlian ◽  
D. R. Watson
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors
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