scholarly journals Linear relation between Heisenberg exchange and interfacial Dzyaloshinskii–Moriya interaction in metal films

2015 ◽  
Vol 11 (10) ◽  
pp. 825-829 ◽  
Author(s):  
Hans T. Nembach ◽  
Justin M. Shaw ◽  
Mathias Weiler ◽  
Emilie Jué ◽  
Thomas J. Silva
Keyword(s):  
Linear Relation ◽  
Metal Films ◽  
Heisenberg Exchange ◽  
Moriya Interaction

Correlation of the Dzyaloshinskii-Moriya Interaction with Heisenberg exchange and orbital asphericity (Conference Presentation)

2018 ◽  
Author(s):  
Sanghoon Kim ◽  
Kohei Ueda ◽  
Gyungchoon Go ◽  
Peong-Hwa Jang ◽  
Kyung-Jin Lee ◽  
...  
Keyword(s):  
Heisenberg Exchange ◽  
Moriya Interaction

Heisenberg Exchange and Dzyaloshinskii-Moriya Interaction in Ultrathin Pt(W)/CoFeB Single and Multilayers

2021 ◽  
pp. 1-1
Author(s):  
Tobias Bottcher ◽  
Kyujoon Lee ◽  
Frank Heussner ◽  
Samridh Jaiswal ◽  
Gerhard Jakob ◽  
...  
Keyword(s):  
Heisenberg Exchange ◽  
Moriya Interaction

scholarly journals Correlation of the Dzyaloshinskii–Moriya interaction with Heisenberg exchange and orbital asphericity

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Sanghoon Kim ◽  
Kohei Ueda ◽  
Gyungchoon Go ◽  
Peong-Hwa Jang ◽  
Kyung-Jin Lee ◽  
...  
Keyword(s):  
Heisenberg Exchange ◽  
Moriya Interaction

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

FERROMAGNETISM IN EPITAXIAL TRANSITION METAL FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1657-C8-1658 ◽  
Author(s):  
C. M. Schneider ◽  
J. J. de Miguel ◽  
P. Bressler ◽  
J. Garbe ◽  
S. Ferrer ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Films
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