scholarly journals Frequency stabilization to 6 × 10−16 via spectral-hole burning

2011 ◽  
Vol 5 (11) ◽  
pp. 688-693 ◽  
Author(s):  
Michael J. Thorpe ◽  
Lars Rippe ◽  
Tara M. Fortier ◽  
Matthew S. Kirchner ◽  
Till Rosenband
Keyword(s):  
Frequency Stabilization ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

Laser frequency stabilization using regenerative spectral hole burning

2000 ◽  
Vol 62 (3) ◽  
pp. 1473-1476 ◽  
Author(s):  
N. M. Strickland ◽  
P. B. Sellin ◽  
Y. Sun ◽  
J. L. Carlsten ◽  
R. L. Cone
Keyword(s):  
Laser Frequency ◽  
Frequency Stabilization ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Laser Frequency Stabilization ◽  
Spectral Hole

Research and Development on Laser Frequency Stabilization Based on Spectral Hole-Burning Effect

2019 ◽  
Vol 56 (11) ◽  
pp. 110003
Author(s):  
韩琳 Lin Han ◽  
林弋戈 Yige Lin ◽  
杨晶 Jing Yang ◽  
蓝英杰 Yingjie Lan ◽  
李烨 Ye Li ◽  
...  
Keyword(s):  
Research And Development ◽  
Laser Frequency ◽  
Frequency Stabilization ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Laser Frequency Stabilization ◽  
Spectral Hole

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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