scholarly journals Coherent control of single spins in silicon carbide at room temperature

2014 ◽  
Vol 14 (2) ◽  
pp. 164-168 ◽  
Author(s):  
Matthias Widmann ◽  
Sang-Yun Lee ◽  
Torsten Rendler ◽  
Nguyen Tien Son ◽  
Helmut Fedder ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Coherent Control

scholarly journals Room-temperature coherent control of implanted defect spins in silicon carbide

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Fei-Fei Yan ◽  
Ai-Lun Yi ◽  
Jun-Feng Wang ◽  
Qiang Li ◽  
Pei Yu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Coherent Control

scholarly journals Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature

2020 ◽  
Vol 124 (22) ◽  
Author(s):  
Jun-Feng Wang ◽  
Fei-Fei Yan ◽  
Qiang Li ◽  
Zheng-Hao Liu ◽  
He Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Coherent Control ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

Room temperature coherent control of defect spin qubits in silicon carbide

Nature ◽  
2011 ◽  
Vol 479 (7371) ◽  
pp. 84-87 ◽  
Author(s):  
William F. Koehl ◽  
Bob B. Buckley ◽  
F. Joseph Heremans ◽  
Greg Calusine ◽  
David D. Awschalom
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Coherent Control ◽  
Spin Qubits

scholarly journals Excitation and coherent control of spin qudit modes in silicon carbide at room temperature

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
V. A. Soltamov ◽  
C. Kasper ◽  
A. V. Poshakinskiy ◽  
A. N. Anisimov ◽  
E. N. Mokhov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Coherent Control

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ-MnO2-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Epitaxial Graphene

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

Prediction of the Strength of Ceramic Tubular Components: Part II — Experimental Verification

1991 ◽  
Author(s):  
D. L. Shelleman ◽  
O. M. Jadaan ◽  
J. C. Conway ◽  
J. J. Mecholsky
Keyword(s):  
Silicon Carbide ◽  
Statistical Theory ◽  
Room Temperature ◽  
Strength Distribution ◽  
Ring Test ◽  
Stress Distributions ◽  
Pressure Test ◽  
Tubular Components ◽  
Tubular Specimens ◽  
Strength Distributions

Abstract The strength distribution of reaction bonded silicon carbide tubes that failed by internal pressurization was predicted from strength distributions obtained from simple laboratory test specimens at room temperature. The strength distributions of flexure bars, C-rings tested in tension, C-rings tested in compression, diametrally compressed O-rings, and internally pressurized short tubes were compared to the strength distribution of internally pressurized long tubes. The methodology involved application of Weibull statistical theory using elasticity theory to define the stress distributions in the simple specimens. The flexural specimens did not yield acceptable results, since they were ground prior to testing, thereby altering their flaw population in comparison with the processing induced flaw populations of the tubular specimens. However, the short tube internal pressure test, the c-ring tested in tension and the diametrally compressed o-ring test configurations yielded accurate predictions, since these specimens more accurately represent the strength limiting flaw population in the long tubes.

Deposition of Thin Films of Silicon Carbide on Fused Quartz and on Sapphire by Laser Ablation of Ceramic Silicon Carbide Targets

1992 ◽  
Vol 285 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
J. Hangas ◽  
E. M. Loaothetis ◽  
Nayef Abu-ageel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Fused Silica ◽  
High Resistivity ◽  
Fused Quartz ◽  
Amorphous Sic ◽  
Very High

ABSTRACTAblation of ceramic silicon carbide with 351 nm excimer radiation was used to depositSIC films on fused silica and on sapphire. For deposition temperatures above 850° C, diffraction shows the films to be crystalline with the [111] axis preferentially oriented normally to the film. Optical spectra show an indirect energy gap at 2.2 eV, near that for the cubic polytype, although the 200 diffractions are absent. Room temperature resistivities range between .02 to .1 Ωcm. Deposition below 600° C yields amorphous SiC with no diffraction bands, low and variable optical band gap and very high resistivity.

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