scholarly journals Gate control of the electron spin-diffusion length in semiconductor quantum wells

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
G. Wang ◽  
B. L. Liu ◽  
A. Balocchi ◽  
P. Renucci ◽  
C. R. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Spin ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Semiconductor Quantum Wells ◽  
Gate Control ◽  
Spin Diffusion Length

scholarly journals Doping dependence of the electron spin diffusion length in germanium

APL Materials ◽  
2019 ◽  
Vol 7 (10) ◽  
pp. 101122 ◽  
Author(s):  
C. Zucchetti ◽  
M. Bollani ◽  
G. Isella ◽  
M. Zani ◽  
M. Finazzi ◽  
...  
Keyword(s):  
Electron Spin ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Doping Dependence ◽  
Spin Diffusion Length

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

2021 ◽  
Vol 129 (1) ◽  
pp. 013901
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
T. Shiihara ◽  
M. Ikawa ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Experimental Estimation ◽  
Spin Diffusion Length

scholarly journals Electron spin relaxation and momentum relaxation in semiconductor quantum wells

2006 ◽  
Vol 55 (6) ◽  
pp. 2961
Author(s):  
Wu Yu ◽  
Jiao Zhong-Xing ◽  
Lei Liang ◽  
Wen Jin-Hui ◽  
Lai Tian-Shu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Semiconductor Quantum Wells ◽  
Momentum Relaxation

scholarly journals Self-consistent determination of spin Hall angle and spin diffusion length in Pt and Pd: The role of the interface spin loss

2018 ◽  
Vol 4 (6) ◽  
pp. eaat1670 ◽  
Author(s):  
Xinde Tao ◽  
Qi Liu ◽  
Bingfeng Miao ◽  
Rui Yu ◽  
Zheng Feng ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Self Consistent ◽  
Hall Angle ◽  
Spin Diffusion Length

scholarly journals Long Spin Diffusion Length in Few-Layer Graphene Flakes

2016 ◽  
Vol 117 (14) ◽  
Author(s):  
W. Yan ◽  
L. C. Phillips ◽  
M. Barbone ◽  
S. J. Hämäläinen ◽  
A. Lombardo ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Spin Diffusion Length ◽  
Few Layer Graphene

Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film: Spin Current Termination

2012 ◽  
Vol 508 ◽  
pp. 266-270 ◽  
Author(s):  
K. Harii ◽  
Z. Qiu ◽  
T. Iwashita ◽  
Y. Kajiwara ◽  
K. Uchida ◽  
...  
Keyword(s):  
Diffusion Equation ◽  
Hall Effect ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Interlayer Thickness ◽  
Spin Pumping ◽  
Charge Current ◽  
Inverse Spin Hall Effect ◽  
Spin Diffusion Length

A Spin Current Generated by Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film Is Calculated Based on the Spin Pumping Theory and the Standard Spin Diffusion Equation. By Attaching the Spin-Sink Layer, the Injected Spin Current Is Drastically Enhanced when the Interlayer Thickness Is Shorter than the Spin Diffusion Length of the Interlayer. We Also Provided the Formula of the Charge Current which Is Induced from the Pumped Spin Current via the Inverse Spin-Hall Effect.

Energy-Efficient Multiferroic Spin-Devices and Spin-Circuits

SPIN ◽  
2020 ◽  
Vol 10 (04) ◽  
pp. 2030001
Author(s):  
Kuntal Roy
Keyword(s):  
Energy Efficient ◽  
Large Scale ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Logic Gates ◽  
Low Energy ◽  
Circuit Representation ◽  
Spin Diffusion Length ◽  
Spin Devices

Spin-devices are switched by flipping spins without moving charge in space and this can lead to ultra-low-energy switching replacing traditional transistors in beyond Moore’s law era. In particular, the electric field-induced magnetization switching has emerged to be an energy-efficient paradigm. Here, we review the recent developments on ultra-low-energy, area-efficient, and fast spin-devices using multiferroic magnetoelectric composites. It is shown that both digital logic gates and analog computing with transistor-like high-gain region in the input-output characteristics of multiferroic composites are feasible. We also review the equivalent spin-circuit representation of spin-devices by considering spin potential and spin current similar to the charge-based counterparts using Kirchhoff’s voltage/current laws, which is necessary for the development of large-scale circuits. We review the spin-circuit representation of spin pumping, which happens anyway when there is a material adjacent to a rotating magnetization and therefore it is particularly necessary to be incorporated in device modeling. Such representation is also useful for understanding and proposing experiments. In spin-circuit representation, spin diffusion length is an important parameter and it is shown that a thickness-dependent spin diffusion length reflecting Elliott–Yafet spin relaxation mechanism in platinum is necessary to match the experimental results.

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