scholarly journals Coherent control of a strongly driven silicon vacancy optical transition in diamond

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Yu Zhou ◽  
Abdullah Rasmita ◽  
Ke Li ◽  
Qihua Xiong ◽  
Igor Aharonovich ◽  
...  
2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Jonas Nils Becker ◽  
Johannes Görlitz ◽  
Carsten Arend ◽  
Matthew Markham ◽  
Christoph Becher

2014 ◽  
Vol 92 (2) ◽  
pp. 144-156 ◽  
Author(s):  
D. Antypas ◽  
D.S. Elliott

We present a full description of the (ω, 2ω) two-pathway coherent control interference technique for measurement of weak, highly forbidden optical transitions. We have recently applied this technique to the measurement of the magnetic dipole transition moment M1 of the 6s 2S1/2 → 7s 2S1/2 transition in atomic cesium. We also demonstrate detailed methods by which this technique may be used for measurement of the electroweak-induced parity nonconserving amplitude in atomic cesium. The principal benefits of this technique include reduced systematic errors related to field reversals often encountered in related measurements, reduced interference from adjacent, noninterfering transitions, and the absence of electric quadrupole transitions. We present a critical evaluation of the effects induced by stray fields and other systematic effects.


2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Benjamin Pingault ◽  
David-Dominik Jarausch ◽  
Christian Hepp ◽  
Lina Klintberg ◽  
Jonas N. Becker ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun-Feng Wang ◽  
Fei-Fei Yan ◽  
Qiang Li ◽  
Zheng-Hao Liu ◽  
Jin-Ming Cui ◽  
...  

AbstractOptically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing.


2019 ◽  
Vol 122 (6) ◽  
Author(s):  
Christian Weinzetl ◽  
Johannes Görlitz ◽  
Jonas Nils Becker ◽  
Ian A. Walmsley ◽  
Eilon Poem ◽  
...  

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.


Author(s):  
Chin-wen Chou ◽  
David Leibrandt ◽  
Dietrich Leibfried ◽  
Scott Diddams ◽  
Tara Fortier ◽  
...  

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